GaN heterostructures with diamond and graphene

B. Pécz, L. Tóth, G. Tsiakatouras, A. Adikimenakis, A. Kovács, M. Duchamp, R. E. Dunin-Borkowski, R. Yakimova, P. L. Neumann, H. Behmenburg, B. Foltynski, C. Giesen, M. Heuken, A. Georgakilas

Research output: Contribution to journalArticle

4 Citations (Scopus)


The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.

Original languageEnglish
Article number114001
JournalSemiconductor Science and Technology
Issue number11
Publication statusPublished - Oct 15 2015


  • GaN
  • diamond
  • electron microscopy
  • graphene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Pécz, B., Tóth, L., Tsiakatouras, G., Adikimenakis, A., Kovács, A., Duchamp, M., Dunin-Borkowski, R. E., Yakimova, R., Neumann, P. L., Behmenburg, H., Foltynski, B., Giesen, C., Heuken, M., & Georgakilas, A. (2015). GaN heterostructures with diamond and graphene. Semiconductor Science and Technology, 30(11), [114001].