Semiconducting thin films from Ga2O3 sensitive to oxygen at temperatures of around 850-1000 °C were produced by a sputtering technique. Their stable oxygen sensitivity is based on a bulk effect independent of the film thickness: the electrical conductivity of the films depends on the oxygen partial pressure according to a law of the form σ ∼ pO2- 1 4. The response times are in the range of seconds. With suitable temperature compensation, Ga2O3 thin films can be used as catalytically inactive oxygen sensors.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry