Gallium oxide thin films: A new material for high-temperature oxygen sensors

Maximilian Fleischer, Hans Meixner

Research output: Contribution to journalArticle

148 Citations (Scopus)


Semiconducting thin films from Ga2O3 sensitive to oxygen at temperatures of around 850-1000 °C were produced by a sputtering technique. Their stable oxygen sensitivity is based on a bulk effect independent of the film thickness: the electrical conductivity of the films depends on the oxygen partial pressure according to a law of the form σ ∼ pO2- 1 4. The response times are in the range of seconds. With suitable temperature compensation, Ga2O3 thin films can be used as catalytically inactive oxygen sensors.

Original languageEnglish
Pages (from-to)437-441
Number of pages5
JournalSensors and Actuators: B. Chemical
Issue number3-4
Publication statusPublished - Jun 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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