GaAs VPE layers for microwave Schottky tuning varactors

I. Gyuró, Z. Horváth

Research output: Contribution to journalArticle

Abstract

The GaAs Schottky microwave tuning varactors require active VPE layers with rather complicated accurate dopant profiles and an abrupt transition to the buffer layer. Moreover the thickness of the buffer layer is desirable to be the smallest and the concentration in it the highest possible. These requirements originate difficulties in the epitaxial growth. The character of the required dopant profiles and the solution of the above difficulties in a horizontal VPE reactor are treated.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalActa Physica Hungarica
Volume61
Issue number2
DOIs
Publication statusPublished - Apr 1987

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varactor diodes
tuning
microwaves
buffers
profiles
reactors
requirements

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

GaAs VPE layers for microwave Schottky tuning varactors. / Gyuró, I.; Horváth, Z.

In: Acta Physica Hungarica, Vol. 61, No. 2, 04.1987, p. 165-168.

Research output: Contribution to journalArticle

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