GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

M. A. di Forte Poisson, M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Tóth, B. Pécz, M. Guziewicz, J. Thorpe, R. Aubry, E. Morvan, N. Sarazin, C. Gaquière, G. Meneghesso, V. Hoel, J. C. Jacquet, S. Delage

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with these structures. Some critical growth parameters, such as growth temperature, V/III ratio and nucleation layer at the GaN/SiC interface, have been investigated, and their impact on physical properties of these heterostructures is studied. Such optimisation of the growth conditions has led to GaAlN/GaN HEMT heterostructures which are successfully compared in terms of material quality to the standard HEMT heterostructures grown on bulk SiC substrates. Their electrical characteristics, such as sheet carrier density (Ns), mobility (μ), pinch-off voltage (Vp) or sheet resistance (Rs), are very similar to those obtained on bulk SiC substrates and their crystallographic properties, assessed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM), seem to be in good agreement with the above-mentioned electrical characteristics. First devices with 0.5 μm gate length, made on these specific composite wafers, exhibit very good microwave performances, with output power of 5 W/mm at 10 GHz, similar to those obtained on bulk SiC substrates, showing the promising capability of SiCopSiC composite substrates.

Original languageEnglish
Pages (from-to)5232-5236
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - Nov 15 2008

Fingerprint

High electron mobility transistors
high electron mobility transistors
Polysilicon
Silicon carbide
silicon carbides
Heterojunctions
composite materials
Composite materials
Substrates
Vapor deposition
optimization
Sheet resistance
Growth temperature
Carrier concentration
Atomic force microscopy
Nucleation
low pressure
Physical properties
physical properties
Microwaves

Keywords

  • A1. Defects
  • A3. Metalorganic vapour phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. Field effect transistors
  • B3. Heterojunction semiconductor devices
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

di Forte Poisson, M. A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Tóth, L., ... Delage, S. (2008). GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. Journal of Crystal Growth, 310(23), 5232-5236. https://doi.org/10.1016/j.jcrysgro.2008.08.035

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. / di Forte Poisson, M. A.; Magis, M.; Tordjman, M.; Di Persio, J.; Langer, R.; Tóth, L.; Pécz, B.; Guziewicz, M.; Thorpe, J.; Aubry, R.; Morvan, E.; Sarazin, N.; Gaquière, C.; Meneghesso, G.; Hoel, V.; Jacquet, J. C.; Delage, S.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 5232-5236.

Research output: Contribution to journalArticle

di Forte Poisson, MA, Magis, M, Tordjman, M, Di Persio, J, Langer, R, Tóth, L, Pécz, B, Guziewicz, M, Thorpe, J, Aubry, R, Morvan, E, Sarazin, N, Gaquière, C, Meneghesso, G, Hoel, V, Jacquet, JC & Delage, S 2008, 'GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application', Journal of Crystal Growth, vol. 310, no. 23, pp. 5232-5236. https://doi.org/10.1016/j.jcrysgro.2008.08.035
di Forte Poisson, M. A. ; Magis, M. ; Tordjman, M. ; Di Persio, J. ; Langer, R. ; Tóth, L. ; Pécz, B. ; Guziewicz, M. ; Thorpe, J. ; Aubry, R. ; Morvan, E. ; Sarazin, N. ; Gaquière, C. ; Meneghesso, G. ; Hoel, V. ; Jacquet, J. C. ; Delage, S. / GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 5232-5236.
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abstract = "This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with these structures. Some critical growth parameters, such as growth temperature, V/III ratio and nucleation layer at the GaN/SiC interface, have been investigated, and their impact on physical properties of these heterostructures is studied. Such optimisation of the growth conditions has led to GaAlN/GaN HEMT heterostructures which are successfully compared in terms of material quality to the standard HEMT heterostructures grown on bulk SiC substrates. Their electrical characteristics, such as sheet carrier density (Ns), mobility (μ), pinch-off voltage (Vp) or sheet resistance (Rs), are very similar to those obtained on bulk SiC substrates and their crystallographic properties, assessed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM), seem to be in good agreement with the above-mentioned electrical characteristics. First devices with 0.5 μm gate length, made on these specific composite wafers, exhibit very good microwave performances, with output power of 5 W/mm at 10 GHz, similar to those obtained on bulk SiC substrates, showing the promising capability of SiCopSiC composite substrates.",
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T1 - GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

AU - di Forte Poisson, M. A.

AU - Magis, M.

AU - Tordjman, M.

AU - Di Persio, J.

AU - Langer, R.

AU - Tóth, L.

AU - Pécz, B.

AU - Guziewicz, M.

AU - Thorpe, J.

AU - Aubry, R.

AU - Morvan, E.

AU - Sarazin, N.

AU - Gaquière, C.

AU - Meneghesso, G.

AU - Hoel, V.

AU - Jacquet, J. C.

AU - Delage, S.

PY - 2008/11/15

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N2 - This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with these structures. Some critical growth parameters, such as growth temperature, V/III ratio and nucleation layer at the GaN/SiC interface, have been investigated, and their impact on physical properties of these heterostructures is studied. Such optimisation of the growth conditions has led to GaAlN/GaN HEMT heterostructures which are successfully compared in terms of material quality to the standard HEMT heterostructures grown on bulk SiC substrates. Their electrical characteristics, such as sheet carrier density (Ns), mobility (μ), pinch-off voltage (Vp) or sheet resistance (Rs), are very similar to those obtained on bulk SiC substrates and their crystallographic properties, assessed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM), seem to be in good agreement with the above-mentioned electrical characteristics. First devices with 0.5 μm gate length, made on these specific composite wafers, exhibit very good microwave performances, with output power of 5 W/mm at 10 GHz, similar to those obtained on bulk SiC substrates, showing the promising capability of SiCopSiC composite substrates.

AB - This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with these structures. Some critical growth parameters, such as growth temperature, V/III ratio and nucleation layer at the GaN/SiC interface, have been investigated, and their impact on physical properties of these heterostructures is studied. Such optimisation of the growth conditions has led to GaAlN/GaN HEMT heterostructures which are successfully compared in terms of material quality to the standard HEMT heterostructures grown on bulk SiC substrates. Their electrical characteristics, such as sheet carrier density (Ns), mobility (μ), pinch-off voltage (Vp) or sheet resistance (Rs), are very similar to those obtained on bulk SiC substrates and their crystallographic properties, assessed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM), seem to be in good agreement with the above-mentioned electrical characteristics. First devices with 0.5 μm gate length, made on these specific composite wafers, exhibit very good microwave performances, with output power of 5 W/mm at 10 GHz, similar to those obtained on bulk SiC substrates, showing the promising capability of SiCopSiC composite substrates.

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KW - A3. Metalorganic vapour phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B3. Field effect transistors

KW - B3. Heterojunction semiconductor devices

KW - B3. High electron mobility transistors

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