Ga metal nanoparticle-GaAs quantum molecule complexes for terahertz generation

Sergio Bietti, Francesco Basso Basset, David Scarpellini, Alexey Fedorov, Andrea Ballabio, Luca Esposito, Martin Elborg, Takashi Kuroda, Akos Nemcsics, Lajos Tóth, Cristian Manzoni, Caterina Vozzi, Stefano Sanguinetti

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2 Citations (Scopus)


A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule (QDM) fabrication and the metal nanoparticle alignment are discussed. The tuning of the relative positioning of QDMs and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical QDM was evaluated on the base of the morphological characterizations performed by atomic force microscopy and cross sectional scanning electron microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition.

Original languageEnglish
Article number365602
Issue number36
Publication statusPublished - Jul 2 2018



  • IIIV semiconductors
  • atomic force microscopy
  • droplet epitaxy
  • molecular beam epitaxy
  • nano-positioning
  • quantum nanostructures

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Bietti, S., Basset, F. B., Scarpellini, D., Fedorov, A., Ballabio, A., Esposito, L., Elborg, M., Kuroda, T., Nemcsics, A., Tóth, L., Manzoni, C., Vozzi, C., & Sanguinetti, S. (2018). Ga metal nanoparticle-GaAs quantum molecule complexes for terahertz generation. Nanotechnology, 29(36), [365602].