Further localizations studies of Co atoms diffused into silicon

István Dézsi, Sándor Fehér, Gyula Forgács, Dezső x. Horváth, Endre Kótai, Asrama Manuaba, Gábor Mezey, Béla Molnár, Dénes Lajos Nagy, Éva Zsoldos

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

57 Co atoms diffused at 1270 K for 1 h into single crystals of Si have a single Mössbauer line at (-0.059±0.001) mm/s. Channelling studies show that 77% of the Co atoms occupy some substitutional sites. It is found that Co forms epitaxial CoSi 2 clusters in the Si lattice.

Original languageEnglish
Pages (from-to)383-386
Number of pages4
JournalNuclear instruments and methods in physics research
Volume199
Issue number1-2
DOIs
Publication statusPublished - Aug 1 1982

ASJC Scopus subject areas

  • Engineering(all)

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    Dézsi, I., Fehér, S., Forgács, G., Horváth, D. X., Kótai, E., Manuaba, A., Mezey, G., Molnár, B., Nagy, D. L., & Zsoldos, É. (1982). Further localizations studies of Co atoms diffused into silicon. Nuclear instruments and methods in physics research, 199(1-2), 383-386. https://doi.org/10.1016/0167-5087(82)90239-3