Fully-screened polarization-induced electric fields in blueviolet InGaNGaN light-emitting devices grown on bulk GaN

G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, S. Kokenyesi

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Abstract

Photocurrent spectroscopy and hydrostatic-pressure-dependent electroluminescence are used to show that heavy 1× 1019 cm-3 Si doping of quantum barriers is sufficient to achieve full screening of polarization-induced electric fields (PIEFs) in nitride light emitting diodes (LEDs) and laser diodes (LDs) with InGaN quantum wells. Furthermore, it is shown that at currents close to lasing threshold in nitride LDs injected charge alone is sufficient to achieve full screening of PIEFs. In contrast, full screening at low currents can only be accomplished via Si doping of quantum barriers.

Original languageEnglish
Article number041109
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
Publication statusPublished - Jul 25 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Franssen, G., Suski, T., Perlin, P., Bohdan, R., Bercha, A., Trzeciakowski, W., Makarowa, I., Prystawko, P., Leszczyński, M., Grzegory, I., Porowski, S., & Kokenyesi, S. (2005). Fully-screened polarization-induced electric fields in blueviolet InGaNGaN light-emitting devices grown on bulk GaN. Applied Physics Letters, 87(4), [041109]. https://doi.org/10.1063/1.2000331