Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

R. Gago, G. Abrasonis, A. Mücklich, W. Möller, Zs Czigány, G. Radnóczi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Carbon nitride (C Nx) thin films were grown by direct N2 Ar ion beam sputtering of a graphite target at moderate substrate temperatures (300-750 K). The resulting microstructure of the films was studied by high-resolution transmission electron microscopy. The images showed the presence of curved basal planes in fullerenelike arrangements. The achievement and evolution of these microstructural features are discussed in terms of nitrogen incorporation, film-forming flux, and ion bombardment effects, thus adding to the understanding of the formation mechanisms of curved graphitic structures in C Nx materials.

Original languageEnglish
Article number071901
JournalApplied Physics Letters
Volume87
Issue number7
DOIs
Publication statusPublished - Aug 15 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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