From stochastic single atomic switch to nanoscale resistive memory device

Attila Geresdi, A. Halbritter, András Gyenis, Péter Makk, G. Mihály

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, somewhat larger junctions with diameters of a few nanometres display a well defined, reproducible switching behavior attributed to the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a lower size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

Original languageEnglish
Pages (from-to)1504-1507
Number of pages4
JournalNanoscale
Volume3
Issue number4
DOIs
Publication statusPublished - Apr 2011

Fingerprint

Switches
Data storage equipment
Tungsten
Induced currents
Silver
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

From stochastic single atomic switch to nanoscale resistive memory device. / Geresdi, Attila; Halbritter, A.; Gyenis, András; Makk, Péter; Mihály, G.

In: Nanoscale, Vol. 3, No. 4, 04.2011, p. 1504-1507.

Research output: Contribution to journalArticle

Geresdi, Attila ; Halbritter, A. ; Gyenis, András ; Makk, Péter ; Mihály, G. / From stochastic single atomic switch to nanoscale resistive memory device. In: Nanoscale. 2011 ; Vol. 3, No. 4. pp. 1504-1507.
@article{bea4dc67bd0c441080cf3ac03673f63f,
title = "From stochastic single atomic switch to nanoscale resistive memory device",
abstract = "We study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, somewhat larger junctions with diameters of a few nanometres display a well defined, reproducible switching behavior attributed to the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a lower size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.",
author = "Attila Geresdi and A. Halbritter and Andr{\'a}s Gyenis and P{\'e}ter Makk and G. Mih{\'a}ly",
year = "2011",
month = "4",
doi = "10.1039/c0nr00951b",
language = "English",
volume = "3",
pages = "1504--1507",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "4",

}

TY - JOUR

T1 - From stochastic single atomic switch to nanoscale resistive memory device

AU - Geresdi, Attila

AU - Halbritter, A.

AU - Gyenis, András

AU - Makk, Péter

AU - Mihály, G.

PY - 2011/4

Y1 - 2011/4

N2 - We study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, somewhat larger junctions with diameters of a few nanometres display a well defined, reproducible switching behavior attributed to the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a lower size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

AB - We study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, somewhat larger junctions with diameters of a few nanometres display a well defined, reproducible switching behavior attributed to the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a lower size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

UR - http://www.scopus.com/inward/record.url?scp=79953736382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953736382&partnerID=8YFLogxK

U2 - 10.1039/c0nr00951b

DO - 10.1039/c0nr00951b

M3 - Article

VL - 3

SP - 1504

EP - 1507

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 4

ER -