Fractal properties of heat treated metal-compound semiconductor structures

B. Kovacs, L. Dobos, I. Mojzes, M. Schuszter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Earlier experiments proved that the surface morphology can be characterized by its fractal dimension. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature and on the metal thickness is described.

Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, CAS
PublisherIEEE
Pages649-652
Number of pages4
Volume2
Publication statusPublished - 1998
EventProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania
Duration: Oct 6 1998Oct 10 1998

Other

OtherProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
CitySinaia, Romania
Period10/6/9810/10/98

Fingerprint

Fractals
Heat treatment
Fractal dimension
Semiconductor materials
Surface morphology
Metals
Mass spectrometry
Scanning electron microscopy
Hot Temperature
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kovacs, B., Dobos, L., Mojzes, I., & Schuszter, M. (1998). Fractal properties of heat treated metal-compound semiconductor structures. In Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 649-652). IEEE.

Fractal properties of heat treated metal-compound semiconductor structures. / Kovacs, B.; Dobos, L.; Mojzes, I.; Schuszter, M.

Proceedings of the International Semiconductor Conference, CAS. Vol. 2 IEEE, 1998. p. 649-652.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kovacs, B, Dobos, L, Mojzes, I & Schuszter, M 1998, Fractal properties of heat treated metal-compound semiconductor structures. in Proceedings of the International Semiconductor Conference, CAS. vol. 2, IEEE, pp. 649-652, Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2), Sinaia, Romania, 10/6/98.
Kovacs B, Dobos L, Mojzes I, Schuszter M. Fractal properties of heat treated metal-compound semiconductor structures. In Proceedings of the International Semiconductor Conference, CAS. Vol. 2. IEEE. 1998. p. 649-652
Kovacs, B. ; Dobos, L. ; Mojzes, I. ; Schuszter, M. / Fractal properties of heat treated metal-compound semiconductor structures. Proceedings of the International Semiconductor Conference, CAS. Vol. 2 IEEE, 1998. pp. 649-652
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