Fractal properties of heat treated metal-compound semiconductor structures

B. Kovacs, L. Dobos, I. Mojzes, M. Schuszter

Research output: Contribution to conferencePaper

Abstract

The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Earlier experiments proved that the surface morphology can be characterized by its fractal dimension. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature and on the metal thickness is described.

Original languageEnglish
Pages649-652
Number of pages4
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania
Duration: Oct 6 1998Oct 10 1998

Other

OtherProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
CitySinaia, Romania
Period10/6/9810/10/98

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kovacs, B., Dobos, L., Mojzes, I., & Schuszter, M. (1998). Fractal properties of heat treated metal-compound semiconductor structures. 649-652. Paper presented at Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2), Sinaia, Romania, .