Fractal properties of gold, palladium and gold-palladium thin films on InP

Bernadett Varga, Antal Ürmös, Szilvia Nagy, Imre Mojzes

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Thermal interaction of indium phosphide (InP) bulk compound semiconductor with thin gold metal films was investigated in the course of the present work. The interaction of the InP/Au system resulted in a pattern showing fractal dimensions. The temperature dependence of the fractal parameters was investigated in a broad temperature range from 200 to 600 °C. No significant temperature dependence of the fractal dimension was observed. The same calculations will be presented for Au/InP and AuPd/InP systems. Our calculations show that the Pd-based contacts have a different behaviour than AuGe metallization where a strong temperature dependence of the fractal number was observed earlier. Another topology measure, the structural entropy is also calculated for the samples. The structural entropy is usually applied for determining the type of the localization of charge distributions, but it can also be used for generalized charges, such as the lightness of the pixels of an electron microscopy picture.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalVacuum
Volume84
Issue number1
DOIs
Publication statusPublished - Aug 25 2009

Keywords

  • Compound semiconductors
  • Metallization
  • Thin films

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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