Fractal behaviour of the surface of in situ heat treated metal-InP contacts

I. Mojzes, B. Kovács, M. Schuszter, I. Kun, L. Máté, L. Dobos, L. Dávid

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass spectrometric study showed, that surface pattern has fractal character at heat treatment temperatures, where the volatile component loss has maximum value. The so-called fractal dimension or scaling factor of self-similarity (D) was evaluated for Au/InP (D = 1.57 ± 0.01), Pd/InP (D = 1.75 ± 0.01) and Au/Pd/InP contacts. The comparison of SEI and BEI images suggested that the geometrical surface patterns, resulted by the balling-up phenomenon, and the pattern, which possible describes the phase inhomogeneity on the same contact, can be characterised by different values of the fractal dimension. In the case of the studied Au/Pd/InP contact, D was 1.56 ± 0.02 for balling up and D was 1.84 ± 0.01 for phase distribution.

Original languageEnglish
Pages (from-to)69-71
Number of pages3
JournalThin Solid Films
Volume317
Issue number1-2
Publication statusPublished - Apr 1 1998

Fingerprint

Fractal dimension
Fractals
fractals
Metals
Heat treatment
heat
heat treatment
metals
Evaporation
Semiconductor materials
Scanning electron microscopy
inhomogeneity
evaporation
scaling
scanning electron microscopy
Temperature
Hot Temperature
temperature

Keywords

  • Evaporation
  • Metallization
  • Semiconductors

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Mojzes, I., Kovács, B., Schuszter, M., Kun, I., Máté, L., Dobos, L., & Dávid, L. (1998). Fractal behaviour of the surface of in situ heat treated metal-InP contacts. Thin Solid Films, 317(1-2), 69-71.

Fractal behaviour of the surface of in situ heat treated metal-InP contacts. / Mojzes, I.; Kovács, B.; Schuszter, M.; Kun, I.; Máté, L.; Dobos, L.; Dávid, L.

In: Thin Solid Films, Vol. 317, No. 1-2, 01.04.1998, p. 69-71.

Research output: Contribution to journalArticle

Mojzes, I, Kovács, B, Schuszter, M, Kun, I, Máté, L, Dobos, L & Dávid, L 1998, 'Fractal behaviour of the surface of in situ heat treated metal-InP contacts', Thin Solid Films, vol. 317, no. 1-2, pp. 69-71.
Mojzes I, Kovács B, Schuszter M, Kun I, Máté L, Dobos L et al. Fractal behaviour of the surface of in situ heat treated metal-InP contacts. Thin Solid Films. 1998 Apr 1;317(1-2):69-71.
Mojzes, I. ; Kovács, B. ; Schuszter, M. ; Kun, I. ; Máté, L. ; Dobos, L. ; Dávid, L. / Fractal behaviour of the surface of in situ heat treated metal-InP contacts. In: Thin Solid Films. 1998 ; Vol. 317, No. 1-2. pp. 69-71.
@article{6b878f300f0e451e998be7bb4eb8f4c7,
title = "Fractal behaviour of the surface of in situ heat treated metal-InP contacts",
abstract = "The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass spectrometric study showed, that surface pattern has fractal character at heat treatment temperatures, where the volatile component loss has maximum value. The so-called fractal dimension or scaling factor of self-similarity (D) was evaluated for Au/InP (D = 1.57 ± 0.01), Pd/InP (D = 1.75 ± 0.01) and Au/Pd/InP contacts. The comparison of SEI and BEI images suggested that the geometrical surface patterns, resulted by the balling-up phenomenon, and the pattern, which possible describes the phase inhomogeneity on the same contact, can be characterised by different values of the fractal dimension. In the case of the studied Au/Pd/InP contact, D was 1.56 ± 0.02 for balling up and D was 1.84 ± 0.01 for phase distribution.",
keywords = "Evaporation, Metallization, Semiconductors",
author = "I. Mojzes and B. Kov{\'a}cs and M. Schuszter and I. Kun and L. M{\'a}t{\'e} and L. Dobos and L. D{\'a}vid",
year = "1998",
month = "4",
day = "1",
language = "English",
volume = "317",
pages = "69--71",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Fractal behaviour of the surface of in situ heat treated metal-InP contacts

AU - Mojzes, I.

AU - Kovács, B.

AU - Schuszter, M.

AU - Kun, I.

AU - Máté, L.

AU - Dobos, L.

AU - Dávid, L.

PY - 1998/4/1

Y1 - 1998/4/1

N2 - The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass spectrometric study showed, that surface pattern has fractal character at heat treatment temperatures, where the volatile component loss has maximum value. The so-called fractal dimension or scaling factor of self-similarity (D) was evaluated for Au/InP (D = 1.57 ± 0.01), Pd/InP (D = 1.75 ± 0.01) and Au/Pd/InP contacts. The comparison of SEI and BEI images suggested that the geometrical surface patterns, resulted by the balling-up phenomenon, and the pattern, which possible describes the phase inhomogeneity on the same contact, can be characterised by different values of the fractal dimension. In the case of the studied Au/Pd/InP contact, D was 1.56 ± 0.02 for balling up and D was 1.84 ± 0.01 for phase distribution.

AB - The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass spectrometric study showed, that surface pattern has fractal character at heat treatment temperatures, where the volatile component loss has maximum value. The so-called fractal dimension or scaling factor of self-similarity (D) was evaluated for Au/InP (D = 1.57 ± 0.01), Pd/InP (D = 1.75 ± 0.01) and Au/Pd/InP contacts. The comparison of SEI and BEI images suggested that the geometrical surface patterns, resulted by the balling-up phenomenon, and the pattern, which possible describes the phase inhomogeneity on the same contact, can be characterised by different values of the fractal dimension. In the case of the studied Au/Pd/InP contact, D was 1.56 ± 0.02 for balling up and D was 1.84 ± 0.01 for phase distribution.

KW - Evaporation

KW - Metallization

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0032046025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032046025&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032046025

VL - 317

SP - 69

EP - 71

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -