Fractal behaviour of in situ heat treated metal-compound semiconductor structures

L. Dobos, I. Mojzes, M. Schuszter

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

During the device preparation, the metal-compound semiconductor junction endures several heat stresses. Due to the heat stress (or intentional heat treatment) material interdiffusion takes place between the layers. The material transport causes inhomogeneities both laterally and perpendicularly to the surface. The aim of this study: a) to show that the lateral inhomogeneity of heat treated multilayer metal-compound semiconductor surfaces have fractal character at special temperatures, as it was demonstrated previously for single layer metallizations; b) to propose a method applicable to determine the fractal dimension of the investigated surface.

Original languageEnglish
Pages229-232
Number of pages4
Publication statusPublished - Jan 1 1997
EventProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania
Duration: Oct 7 1997Oct 11 1997

Other

OtherProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
CitySinaia, Romania
Period10/7/9710/11/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Dobos, L., Mojzes, I., & Schuszter, M. (1997). Fractal behaviour of in situ heat treated metal-compound semiconductor structures. 229-232. Paper presented at Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2), Sinaia, Romania, .