Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing

B. Pécz, O. Klettke, G. Pensl, J. Stoemenos

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The structural characteristics of oxygen-implanted 6H-SiC, which was annealed at 1650° and 1900 °C were studied by Transmission Electron Microscopy (TEM). Oxygen-related clusters are formed during the annealing. The size of the clusters increases and their density decreases by increasing the annealing temperature. Tetrahedral precipitates with a mean size of 5 nm are developed after annealing at 1900 °C for two hours. The precipitates are apparently amorphous suggesting that SiO2 is formed. Significant strain is developed around the precipitates, which imposes a displacement vector R along the c-axis. The large precipitates punch dislocation loops. The loops are always generated at the edges of the precipitates.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period10/10/9910/15/99

Fingerprint

Precipitates
Annealing
Oxygen
Transmission electron microscopy
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Pécz, B., Klettke, O., Pensl, G., & Stoemenos, J. (2000). Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing. / Pécz, B.; Klettke, O.; Pensl, G.; Stoemenos, J.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pécz, B, Klettke, O, Pensl, G & Stoemenos, J 2000, Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 10/10/99.
Pécz B, Klettke O, Pensl G, Stoemenos J. Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Pécz, B. ; Klettke, O. ; Pensl, G. ; Stoemenos, J. / Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
@inbook{0848088047d4440fb8c9b8663459d36b,
title = "Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing",
abstract = "The structural characteristics of oxygen-implanted 6H-SiC, which was annealed at 1650° and 1900 °C were studied by Transmission Electron Microscopy (TEM). Oxygen-related clusters are formed during the annealing. The size of the clusters increases and their density decreases by increasing the annealing temperature. Tetrahedral precipitates with a mean size of 5 nm are developed after annealing at 1900 °C for two hours. The precipitates are apparently amorphous suggesting that SiO2 is formed. Significant strain is developed around the precipitates, which imposes a displacement vector R along the c-axis. The large precipitates punch dislocation loops. The loops are always generated at the edges of the precipitates.",
author = "B. P{\'e}cz and O. Klettke and G. Pensl and J. Stoemenos",
year = "2000",
language = "English",
volume = "338",
booktitle = "Materials Science Forum",
publisher = "Trans Tech Publ Ltd",

}

TY - CHAP

T1 - Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing

AU - Pécz, B.

AU - Klettke, O.

AU - Pensl, G.

AU - Stoemenos, J.

PY - 2000

Y1 - 2000

N2 - The structural characteristics of oxygen-implanted 6H-SiC, which was annealed at 1650° and 1900 °C were studied by Transmission Electron Microscopy (TEM). Oxygen-related clusters are formed during the annealing. The size of the clusters increases and their density decreases by increasing the annealing temperature. Tetrahedral precipitates with a mean size of 5 nm are developed after annealing at 1900 °C for two hours. The precipitates are apparently amorphous suggesting that SiO2 is formed. Significant strain is developed around the precipitates, which imposes a displacement vector R along the c-axis. The large precipitates punch dislocation loops. The loops are always generated at the edges of the precipitates.

AB - The structural characteristics of oxygen-implanted 6H-SiC, which was annealed at 1650° and 1900 °C were studied by Transmission Electron Microscopy (TEM). Oxygen-related clusters are formed during the annealing. The size of the clusters increases and their density decreases by increasing the annealing temperature. Tetrahedral precipitates with a mean size of 5 nm are developed after annealing at 1900 °C for two hours. The precipitates are apparently amorphous suggesting that SiO2 is formed. Significant strain is developed around the precipitates, which imposes a displacement vector R along the c-axis. The large precipitates punch dislocation loops. The loops are always generated at the edges of the precipitates.

UR - http://www.scopus.com/inward/record.url?scp=18844479336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844479336&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:18844479336

VL - 338

BT - Materials Science Forum

PB - Trans Tech Publ Ltd

ER -