Formation of Higher Silanes in Low-Temperature Silane (SiH4) Ices

G. Tarczay, Marko Förstel, Pavlo Maksyutenko, Ralf I. Kaiser

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel approach for the synthesis and identification of higher silanes (SinH2n+2, where n ≤ 19) is presented. Thin films of (d4-)silane deposited onto a cold surface were exposed under ultra-high-vacuum conditions to energetic electrons and sampled on line and in situ via infrared and ultraviolet-visible spectroscopy. Gas phase products released by fractional sublimation in the warm-up phase after the irradiation were probed via a reflectron time-of-flight mass spectrometer coupled with a tunable vacuum ultraviolet photon ionization source. The formation mechanisms of (higher) silanes were investigated by irradiating codeposited 1:1 silane (SiH4)/d4-silane (SiD4) ices, suggesting that both radical-radical recombination and radical insertion pathways contribute to the formation of disilane along with higher silanes up to nonadecasilane (Si19H40).

Original languageEnglish
Pages (from-to)8776-8785
Number of pages10
JournalInorganic Chemistry
Volume55
Issue number17
DOIs
Publication statusPublished - Sep 6 2016

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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