Formation of Ge nanocrystals in SiO 2 by electron beam evaporation

P. Basa, G. Molnár, L. Dobos, B. Pécz, L. Tóth, A. L. Tóth, A. A. Koós, L. Dózsa, Á Nemcsics, Zs J. Horváth

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16 Citations (Scopus)

Abstract

Ge nanocrystals were formed by electron beam evaporation on SiO 2 covered Si substrates. The size and distribution of the nanocrystals were studied by atomic force microscopy, scanning electron microscopy and cross-sectional transmission electron microscopy. Dependencies of the nanocrystal size, of the nanocrystal surface coverage, and sheet resistance obtained by van der Pauw method of the Ge layer have been found on the evaporation time. The suggested growth mechanism for the formation of nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.

Original languageEnglish
Pages (from-to)818-822
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 1 2008

Keywords

  • Ge nanocrystals
  • Sheet resistance
  • Size distribution
  • Surface coverage
  • Thermal evaporation

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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