Formation of ge nanocrystals by electron beam evaporation

P. Basa, G. Molnár, A. A. KoÓs, L. DÓzsa, Á Nemcsics, Zs J. Horváth, P. M. Gorley, V. P. Makhniy, S. V. Bilichuk, V. M. Frasunyak, P. P. Horley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge nanocrystals were formed by electron beam evaporation on SiO 2-covered Si substrates. Dependencies of the nanocrystal size, the nanocrystal surface coverage, and sheet resistance of the Ge layer were studied on the evaporation time. The growth mechanism of the nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes
Pages431-434
Number of pages4
Publication statusPublished - Dec 1 2007
EventInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Minsk, Belarus
Duration: May 22 2007May 25 2007

Publication series

NameProceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes

Other

OtherInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007
CountryBelarus
CityMinsk
Period5/22/075/25/07

ASJC Scopus subject areas

  • Biotechnology

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    Basa, P., Molnár, G., A. KoÓs, A., DÓzsa, L., Nemcsics, Á., Horváth, Z. J., Gorley, P. M., Makhniy, V. P., Bilichuk, S. V., Frasunyak, V. M., & Horley, P. P. (2007). Formation of ge nanocrystals by electron beam evaporation. In Proceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes (pp. 431-434). (Proceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes).