Formation of complex Tungsten-Silica microstructures by Ar+ laser processing

Z. Tóth, Klaus Piglmayer

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The possibility for localized, spatially separated laser-induced deposition and etching of tungsten from pure WF6 gas is demonstrated. By employing a fused silica substrate covered with a tungsten layer, a threefold process is induced; deposition of tungsten in the center of the laser beam, etching of the tungsten-layer outside of the beam center and etching the excavated silica by fluorine radicals. This multiple process results in an effective drilling. The deposition of a conducting tungsten kernel inside a high aspect ratio hole, formed in the insulating silica, suggests the applicability, to a single-step production of field emitter units.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2004

Fingerprint

Tungsten
Silicon Dioxide
tungsten
Silica
silicon dioxide
microstructure
Microstructure
Lasers
Processing
Etching
lasers
etching
Fluorine
Fused silica
high aspect ratio
drilling
Laser beams
fluorine
Aspect ratio
Drilling

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Formation of complex Tungsten-Silica microstructures by Ar+ laser processing. / Tóth, Z.; Piglmayer, Klaus.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 11, 2004.

Research output: Contribution to journalArticle

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