Formation of complex Tungsten-Silica microstructures by Ar+ laser processing

Zsolt Tóth, Klaus Piglmayer

Research output: Contribution to journalArticle

3 Citations (Scopus)


The possibility for localized, spatially separated laser-induced deposition and etching of tungsten from pure WF6 gas is demonstrated. By employing a fused silica substrate covered with a tungsten layer, a threefold process is induced; deposition of tungsten in the center of the laser beam, etching of the tungsten-layer outside of the beam center and etching the excavated silica by fluorine radicals. This multiple process results in an effective drilling. The deposition of a conducting tungsten kernel inside a high aspect ratio hole, formed in the insulating silica, suggests the applicability, to a single-step production of field emitter units.

Original languageEnglish
Pages (from-to)C133-C135
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - Dec 17 2004

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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