FORMATION OF ALUMINIUM THIN FILMS IN THE PRESENCE OF OXYGEN AND NICKEL.

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Oxygen in residual gases affects the layer growth of individual crystallites. The adsorbed oxygen accumulates at the growth steps continuously and oxide precipitates and two-dimensional oxide films can develop along the steps, hindering the growth of layers. These phenomena depend on the orientation of crystallites and influence both the coalescence of contacting crystallites and their recrystallization in continuous films. The formation of inhomogeneous structures and hillocks is explained.

Original languageEnglish
Pages (from-to)427-435
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume55
Issue number2
Publication statusPublished - Oct 1979

Fingerprint

Nickel
Aluminum
Crystallites
crystallites
nickel
Oxygen
aluminum
Thin films
oxygen
thin films
residual gas
Coalescence
Crystal orientation
Oxides
coalescing
Oxide films
oxide films
Precipitates
precipitates
Crystallization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

FORMATION OF ALUMINIUM THIN FILMS IN THE PRESENCE OF OXYGEN AND NICKEL. / Barna, A.; Barna, P.; Radnóczi, G.; Reicha, F. M.; Tóth, L.

In: Physica Status Solidi (A) Applied Research, Vol. 55, No. 2, 10.1979, p. 427-435.

Research output: Contribution to journalArticle

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