Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites

Dmitry Goroshko, Evgeniy Chusovitin, Dmitry Bezbabniy, Laszlo Dózsa, Bela Pécz, Nikolay Galkin

Research output: Contribution to journalArticle

2 Citations (Scopus)


Three-layer heterostructures with embedded CrSi2 nanocrystallites were grown using molecular-beam epitaxy. The nanocrystallites have epitaxial orientation to the silicon lattice and are subjected to anisotropic compressive stress in the CrSi2 [001] direction. The thermoelectric power factor of the heterostructure is about 5 times higher than that in the substrate at 300–480 K. Taking into consideration the ratio of nanocomposite and substrate thickness, the real power factor is expected to be 2–3 orders higher than the measured one and it reaches 3200 μW K-2 m-1 at 470 K.

Original languageEnglish
Pages (from-to)424-428
Number of pages5
JournalElectronic Materials Letters
Issue number3
Publication statusPublished - May 30 2015


  • compound semiconductors
  • heterostructures
  • nanocomposite
  • self-organization
  • thermoelectric materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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