Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching

E. Belas, R. Grill, J. Franc, H. Sitter, P. Moravec, P. Höschl, A. Tóth

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The extended model describing the formation and propagation of a converted n-type layer in p-(HgCd)Te during dry etching (DE) based on the ultrafast diffusion of Hg interstitials and their recombination with Hg vacancies is presented. A couple of one- and two-dimensional equations are solved numerically to characterize the kinetics of the p-n junction. The time dependence of the p-n junction depth and ratio of lateral extension under the shielding mask to the depth of the p-n junction are calculated considering a detailed initial condition of the Hg-interstitial surface source.

Original languageEnglish
Pages (from-to)738-742
Number of pages5
JournalJournal of Electronic Materials
Volume31
Issue number7
Publication statusPublished - Jul 2002

Fingerprint

Dry etching
p-n junctions
Shielding
Vacancies
Masks
etching
Kinetics
propagation
interstitials
time dependence
shielding
masks
kinetics

Keywords

  • (HgCd)Te
  • Chemical diffusion
  • Dry etching
  • Type conversion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Belas, E., Grill, R., Franc, J., Sitter, H., Moravec, P., Höschl, P., & Tóth, A. (2002). Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching. Journal of Electronic Materials, 31(7), 738-742.

Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching. / Belas, E.; Grill, R.; Franc, J.; Sitter, H.; Moravec, P.; Höschl, P.; Tóth, A.

In: Journal of Electronic Materials, Vol. 31, No. 7, 07.2002, p. 738-742.

Research output: Contribution to journalArticle

Belas, E, Grill, R, Franc, J, Sitter, H, Moravec, P, Höschl, P & Tóth, A 2002, 'Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching', Journal of Electronic Materials, vol. 31, no. 7, pp. 738-742.
Belas E, Grill R, Franc J, Sitter H, Moravec P, Höschl P et al. Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching. Journal of Electronic Materials. 2002 Jul;31(7):738-742.
Belas, E. ; Grill, R. ; Franc, J. ; Sitter, H. ; Moravec, P. ; Höschl, P. ; Tóth, A. / Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching. In: Journal of Electronic Materials. 2002 ; Vol. 31, No. 7. pp. 738-742.
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AU - Höschl, P.

AU - Tóth, A.

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