Formation and contact properties of titanium-silicided shallow junctions

Christine Dehm, J. Gyulai, Heiner Ryssel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, TiSi2 contacts were fabricated using self-aligned silicidation technology by ion-beam mixing with germanium. The implantation energy for the mixing process was optimized by comparing Monte-Carlo simulations with sputtering neutral mass spectroscopy (SNMS) results. Shallow p+ n junctions of 150 nm depth could be formed by 13 keV boron implantation in silicided germanium amorphized silicon substrates. For germanium amorphization, three implantation energies were chosen to cause an overlap between interstitial-rich areas of low energy implantation with vacancy-rich regions of subsequent high energy implantations. Using this triple germanium amorphization, end-of-range defect concentrations could be appreciable reduced compared to convential substrate amorphization, leading also to improved electrical characteristics. By triple germanium amorphization and 13 keV boron implantation low leakage currents of 10 nA and an ideality factor of 1.08 could be achieved.

Original languageEnglish
Pages (from-to)313-320
Number of pages8
JournalApplied Surface Science
Volume53
Issue numberC
DOIs
Publication statusPublished - Nov 1 1991

Fingerprint

Germanium
Titanium
Amorphization
implantation
titanium
germanium
Boron
Ion implantation
boron
Silicon
Substrates
energy
Leakage currents
Ion beams
Vacancies
Sputtering
p-n junctions
Spectroscopy
interstitials
leakage

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Formation and contact properties of titanium-silicided shallow junctions. / Dehm, Christine; Gyulai, J.; Ryssel, Heiner.

In: Applied Surface Science, Vol. 53, No. C, 01.11.1991, p. 313-320.

Research output: Contribution to journalArticle

Dehm, Christine ; Gyulai, J. ; Ryssel, Heiner. / Formation and contact properties of titanium-silicided shallow junctions. In: Applied Surface Science. 1991 ; Vol. 53, No. C. pp. 313-320.
@article{8c28e2e262f2498a83e53c2e741d73c5,
title = "Formation and contact properties of titanium-silicided shallow junctions",
abstract = "In this study, TiSi2 contacts were fabricated using self-aligned silicidation technology by ion-beam mixing with germanium. The implantation energy for the mixing process was optimized by comparing Monte-Carlo simulations with sputtering neutral mass spectroscopy (SNMS) results. Shallow p+ n junctions of 150 nm depth could be formed by 13 keV boron implantation in silicided germanium amorphized silicon substrates. For germanium amorphization, three implantation energies were chosen to cause an overlap between interstitial-rich areas of low energy implantation with vacancy-rich regions of subsequent high energy implantations. Using this triple germanium amorphization, end-of-range defect concentrations could be appreciable reduced compared to convential substrate amorphization, leading also to improved electrical characteristics. By triple germanium amorphization and 13 keV boron implantation low leakage currents of 10 nA and an ideality factor of 1.08 could be achieved.",
author = "Christine Dehm and J. Gyulai and Heiner Ryssel",
year = "1991",
month = "11",
day = "1",
doi = "10.1016/0169-4332(91)90280-W",
language = "English",
volume = "53",
pages = "313--320",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "C",

}

TY - JOUR

T1 - Formation and contact properties of titanium-silicided shallow junctions

AU - Dehm, Christine

AU - Gyulai, J.

AU - Ryssel, Heiner

PY - 1991/11/1

Y1 - 1991/11/1

N2 - In this study, TiSi2 contacts were fabricated using self-aligned silicidation technology by ion-beam mixing with germanium. The implantation energy for the mixing process was optimized by comparing Monte-Carlo simulations with sputtering neutral mass spectroscopy (SNMS) results. Shallow p+ n junctions of 150 nm depth could be formed by 13 keV boron implantation in silicided germanium amorphized silicon substrates. For germanium amorphization, three implantation energies were chosen to cause an overlap between interstitial-rich areas of low energy implantation with vacancy-rich regions of subsequent high energy implantations. Using this triple germanium amorphization, end-of-range defect concentrations could be appreciable reduced compared to convential substrate amorphization, leading also to improved electrical characteristics. By triple germanium amorphization and 13 keV boron implantation low leakage currents of 10 nA and an ideality factor of 1.08 could be achieved.

AB - In this study, TiSi2 contacts were fabricated using self-aligned silicidation technology by ion-beam mixing with germanium. The implantation energy for the mixing process was optimized by comparing Monte-Carlo simulations with sputtering neutral mass spectroscopy (SNMS) results. Shallow p+ n junctions of 150 nm depth could be formed by 13 keV boron implantation in silicided germanium amorphized silicon substrates. For germanium amorphization, three implantation energies were chosen to cause an overlap between interstitial-rich areas of low energy implantation with vacancy-rich regions of subsequent high energy implantations. Using this triple germanium amorphization, end-of-range defect concentrations could be appreciable reduced compared to convential substrate amorphization, leading also to improved electrical characteristics. By triple germanium amorphization and 13 keV boron implantation low leakage currents of 10 nA and an ideality factor of 1.08 could be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0026258742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026258742&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(91)90280-W

DO - 10.1016/0169-4332(91)90280-W

M3 - Article

VL - 53

SP - 313

EP - 320

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -