Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations < 105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.
|Number of pages||9|
|Journal||Periodica Polytechnica Chemical Engineering|
|Publication status||Published - Jan 1 1990|
ASJC Scopus subject areas
- Chemical Engineering(all)