Formation and characterization of nitrogen implanted silicon-on-insulator structure

N. Q. Khanh, M. Fried, T. Lohner, V. Schiller, A. Adam

Research output: Contribution to journalArticle

Abstract

Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations <105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.

Original languageEnglish
Pages (from-to)63-71
Number of pages9
JournalPeriodica Polytechnica: Chemical Engineering
Volume34
Issue number1-3
Publication statusPublished - 1990

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Silicon
Integrated circuits
Transistors
Nitrogen
Dislocations (crystals)
Silicon wafers
Nitrides
Single crystals
Annealing
Ions
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Formation and characterization of nitrogen implanted silicon-on-insulator structure. / Khanh, N. Q.; Fried, M.; Lohner, T.; Schiller, V.; Adam, A.

In: Periodica Polytechnica: Chemical Engineering, Vol. 34, No. 1-3, 1990, p. 63-71.

Research output: Contribution to journalArticle

@article{a26589087de443508c575299321d5cbd,
title = "Formation and characterization of nitrogen implanted silicon-on-insulator structure",
abstract = "Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations <105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.",
author = "Khanh, {N. Q.} and M. Fried and T. Lohner and V. Schiller and A. Adam",
year = "1990",
language = "English",
volume = "34",
pages = "63--71",
journal = "Periodica Polytechnica: Chemical Engineering",
issn = "0324-5853",
publisher = "Budapest University of Technology and Economics",
number = "1-3",

}

TY - JOUR

T1 - Formation and characterization of nitrogen implanted silicon-on-insulator structure

AU - Khanh, N. Q.

AU - Fried, M.

AU - Lohner, T.

AU - Schiller, V.

AU - Adam, A.

PY - 1990

Y1 - 1990

N2 - Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations <105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.

AB - Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations <105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.

UR - http://www.scopus.com/inward/record.url?scp=0025566476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025566476&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025566476

VL - 34

SP - 63

EP - 71

JO - Periodica Polytechnica: Chemical Engineering

JF - Periodica Polytechnica: Chemical Engineering

SN - 0324-5853

IS - 1-3

ER -