Formation and characterization of nitrogen implanted silicon-on-insulator structure

N. Q. Khanh, M. Fried, T. Lohner, V. Schiller, A. Adam

Research output: Contribution to journalArticle


Silicon wafer has been implanted with 200 keV 14N+ ions to a dose of 0.75 × 1018 N+/cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations < 105/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOI structure for integrated circuit application.

Original languageEnglish
Pages (from-to)63-71
Number of pages9
JournalPeriodica Polytechnica Chemical Engineering
Issue number1-3
Publication statusPublished - Jan 1 1990

ASJC Scopus subject areas

  • Chemical Engineering(all)

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