Formation and characterization of electric contacts on CVD diamond films prepared by ion implantation

G. Kovách, H. Csorbai, G. Dobos, A. Karacs, G. Peto

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy).

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalMaterials Science Forum
Volume473-474
DOIs
Publication statusPublished - Jan 1 2005
Event4th Hungarian Conference on Materials Science, Testing and Informatics - Balatonfured, Hungary
Duration: Oct 12 2003Oct 14 2003

Keywords

  • Contacts
  • Ion-implantation
  • MW-CVD diamond
  • Wide band-gap semiconductor

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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