Fluctuation model for a rough metal/semiconductor interface

N. L. Dmitruk, O. Yu Borkovskaya, Z. Horváth, I. B. Mamontova, S. V. Mamykin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The fluctuation model with Gaussian-type of barrier heights distribution that was recently applied successfully to explain the dark current-voltage characteristics of Au/GaAs barrier structure with microrelief interface, in this paper is extended to photoelectric characteristics. In addition to the change of the Richardson constant and the apparent temperature coefficient of barrier height we predict the decrease of the open-circuit voltage of photodetectors or solar cells. The theoretical predictions have been verified experimentally on the Au/GaAs Schottky barriers with dendrite-like or quasigrating interface prepared by wet anisotropic etching.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages933-938
Number of pages6
Edition3
DOIs
Publication statusPublished - 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002

Other

Other6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002
CountryHungary
CityBudapest
Period5/26/025/29/02

Fingerprint

Anisotropic etching
Dendrites (metallography)
Wet etching
Dark currents
Open circuit voltage
Current voltage characteristics
Photodetectors
Solar cells
Metals
Semiconductor materials
metals
Temperature
dendrites
dark current
open circuit voltage
photometers
solar cells
etching
gallium arsenide
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Dmitruk, N. L., Borkovskaya, O. Y., Horváth, Z., Mamontova, I. B., & Mamykin, S. V. (2003). Fluctuation model for a rough metal/semiconductor interface. In Physica Status Solidi C: Conferences (3 ed., pp. 933-938) https://doi.org/10.1002/pssc.200306228

Fluctuation model for a rough metal/semiconductor interface. / Dmitruk, N. L.; Borkovskaya, O. Yu; Horváth, Z.; Mamontova, I. B.; Mamykin, S. V.

Physica Status Solidi C: Conferences. 3. ed. 2003. p. 933-938.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dmitruk, NL, Borkovskaya, OY, Horváth, Z, Mamontova, IB & Mamykin, SV 2003, Fluctuation model for a rough metal/semiconductor interface. in Physica Status Solidi C: Conferences. 3 edn, pp. 933-938, 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002, Budapest, Hungary, 5/26/02. https://doi.org/10.1002/pssc.200306228
Dmitruk NL, Borkovskaya OY, Horváth Z, Mamontova IB, Mamykin SV. Fluctuation model for a rough metal/semiconductor interface. In Physica Status Solidi C: Conferences. 3 ed. 2003. p. 933-938 https://doi.org/10.1002/pssc.200306228
Dmitruk, N. L. ; Borkovskaya, O. Yu ; Horváth, Z. ; Mamontova, I. B. ; Mamykin, S. V. / Fluctuation model for a rough metal/semiconductor interface. Physica Status Solidi C: Conferences. 3. ed. 2003. pp. 933-938
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