Flexible thin-film transistors on planarized parylene substrate with recessed individual backgates

Balázs Farkas, Tomas Nyberg, L. Nánai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

With novel design and fabrication techniques, InGaZnO-based thin-film transistors with individual recessed back-gates were fabricated on flexible and transparent polymer substrates. The key components for the fabrication include using a machine park optimized for Si process technology, low-adhesion, room temperature parylene coating, AlOx-ZnOx(Al)-based inorganic lift-off process, and a recessed individual gate concept. Transistors were built to validate the viability of the design as well as aforementioned techniques. The demonstrated approach could open up new design possibilities for cheap, flexible devices, while the recessed-gate concept shows promise towards the use of more brittle layers in our flexible thin-film electronic devices.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalSolid-State Electronics
Volume94
DOIs
Publication statusPublished - Apr 2014

Fingerprint

Thin film transistors
transistors
Substrates
thin films
Fabrication
fabrication
viability
Polymers
Transistors
adhesion
Adhesion
coatings
Thin films
Coatings
polymers
room temperature
electronics
parylene
Temperature

Keywords

  • Flexible electronics
  • In-Ga-Zn-O
  • Polymer films
  • Semiconductor device manufacture
  • Thin film transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Flexible thin-film transistors on planarized parylene substrate with recessed individual backgates. / Farkas, Balázs; Nyberg, Tomas; Nánai, L.

In: Solid-State Electronics, Vol. 94, 04.2014, p. 11-14.

Research output: Contribution to journalArticle

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