First-principles study on photoluminescence quenching of divacancy in 4H SIC

A. Csóré, B. Magnusson, N. T. Son, A. Gällström, T. Ohshima, I. G. Ivanov, A. Gali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, quenching effect in the photoluminescence (PL) spectrum of divacancy defects in 4H SiC is investigated. Quenching in PL occurs when photoexcitation with an energy below a certain threshold is applied. In order to understand this phenomenon, we carried out Kohn-Sham density functional theory (DFT) calculations. In accordance with recent experimental results, we propose a physical model which explains the quenching phenomenon.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2018
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications Ltd
Pages714-717
Number of pages4
ISBN (Print)9783035713329
DOIs
Publication statusPublished - Jan 1 2019
Event12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, United Kingdom
Duration: Sep 2 2018Sep 6 2018

Publication series

NameMaterials Science Forum
Volume963 MSF
ISSN (Print)0255-5476

Conference

Conference12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
CountryUnited Kingdom
CityBirmingham
Period9/2/189/6/18

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Keywords

  • DFT
  • Divacancy
  • Photoluminescence
  • Quantum computing
  • Qubit

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Csóré, A., Magnusson, B., Son, N. T., Gällström, A., Ohshima, T., Ivanov, I. G., & Gali, A. (2019). First-principles study on photoluminescence quenching of divacancy in 4H SIC. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Silicon Carbide and Related Materials, 2018 (pp. 714-717). (Materials Science Forum; Vol. 963 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.963.714