First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor Applications

Jyh Pin Chou, Zoltán Bodrog, A. Gali

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Solid-state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make it possible to create proximate qubits in solids that might interact with each other, leading to electron spin or charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form a NV-NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond.

Original languageEnglish
Article number136401
JournalPhysical Review Letters
Volume120
Issue number13
DOIs
Publication statusPublished - Mar 27 2018

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solid state
nitrogen
sensors
point defects
diamonds
electron spin
platforms
engineering
defects
molecules

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor Applications. / Chou, Jyh Pin; Bodrog, Zoltán; Gali, A.

In: Physical Review Letters, Vol. 120, No. 13, 136401, 27.03.2018.

Research output: Contribution to journalArticle

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