First principles investigation of divacancy in SiC polytypes for solid state qubit application

K. Szász, V. Ivády, E. Janzén, A. Gali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We calculated the hyperfine structure and the zero-field splitting parameters of divacancies in 3C, 4H and 6H SiC in the ground state and in the excited state for 4H SiC within the framework of density functional theory. Besides that our calculations provide identification of the defect in different polytypes, we can find some carbon atoms next to the divacancy that of the spin polarizations are similar in the ground and excited states. This coherent nuclear spin polarization phenomenon can be the base to utilize 13C spins as quantum memory.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages499-502
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: Sep 29 2013Oct 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

Fingerprint

Spin polarization
Excited states
Ground state
solid state
ground state
polarization
hyperfine structure
nuclear spin
excitation
Density functional theory
Carbon
density functional theory
Data storage equipment
Atoms
Defects
carbon
defects
atoms

Keywords

  • Hyperfine coupling
  • Optically detected magnetic resonance
  • Photoluminescence
  • Solid state quantum bit
  • Zero-field splitting

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Szász, K., Ivády, V., Janzén, E., & Gali, A. (2014). First principles investigation of divacancy in SiC polytypes for solid state qubit application. In Materials Science Forum (Vol. 778-780, pp. 499-502). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.499

First principles investigation of divacancy in SiC polytypes for solid state qubit application. / Szász, K.; Ivády, V.; Janzén, E.; Gali, A.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 499-502 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Szász, K, Ivády, V, Janzén, E & Gali, A 2014, First principles investigation of divacancy in SiC polytypes for solid state qubit application. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 499-502, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.499
Szász K, Ivády V, Janzén E, Gali A. First principles investigation of divacancy in SiC polytypes for solid state qubit application. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 499-502. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.499
Szász, K. ; Ivády, V. ; Janzén, E. ; Gali, A. / First principles investigation of divacancy in SiC polytypes for solid state qubit application. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 499-502 (Materials Science Forum).
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