First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal

C. Biino, M. Clement, N. Doble, K. Elsener, L. Gatignon, P. Grafstrom, U. Mikkelsen, A. Taratin, S. P. Moller, E. Uggerhoj, P. Keppler, J. Major

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

For the first time, the deflection of an ultra-relativistic, fully stripped Pb82+ ion beam in a bent silicon crystal has been observed. The ions were provided by the CERN-SPS in the H4 beam at a momentum of 400 GeV/c per unit of charge. A 60 mm long silicon crystal, bent over 50 mm to give a 4 mrad deflection angle, was used in this experiment. The measured Pb ion deflection efficiency is comparable to the one obtained with protons at an equivalent ratio of momentum per charge, and is found to be about 15% for a beam with a divergence of 35 microradians (FWHM). The interaction rate observed in a background counter is found to drop when the crystal is well aligned with the beam. This corroborates further the channeling model, which predicts that channeled ions are steered away from regions of high electron densities as well as the nuclei in the crystal.

Original languageEnglish
Title of host publicationProceedings of the IEEE Particle Accelerator Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages165-167
Number of pages3
Volume1
Publication statusPublished - 1998
EventProceedings of the 1997 17th Particle Accelerator Conference, PAC-97 - Vancouver, BC, CAN
Duration: May 12 1997May 16 1997

Other

OtherProceedings of the 1997 17th Particle Accelerator Conference, PAC-97
CityVancouver, BC, CAN
Period5/12/975/16/97

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Ion beams
Silicon
Crystals
Momentum
Ions
Full width at half maximum
Carrier concentration
Protons
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Biino, C., Clement, M., Doble, N., Elsener, K., Gatignon, L., Grafstrom, P., ... Major, J. (1998). First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal. In Proceedings of the IEEE Particle Accelerator Conference (Vol. 1, pp. 165-167). Institute of Electrical and Electronics Engineers Inc..

First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal. / Biino, C.; Clement, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafstrom, P.; Mikkelsen, U.; Taratin, A.; Moller, S. P.; Uggerhoj, E.; Keppler, P.; Major, J.

Proceedings of the IEEE Particle Accelerator Conference. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 1998. p. 165-167.

Research output: Chapter in Book/Report/Conference proceedingChapter

Biino, C, Clement, M, Doble, N, Elsener, K, Gatignon, L, Grafstrom, P, Mikkelsen, U, Taratin, A, Moller, SP, Uggerhoj, E, Keppler, P & Major, J 1998, First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal. in Proceedings of the IEEE Particle Accelerator Conference. vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 165-167, Proceedings of the 1997 17th Particle Accelerator Conference, PAC-97, Vancouver, BC, CAN, 5/12/97.
Biino C, Clement M, Doble N, Elsener K, Gatignon L, Grafstrom P et al. First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal. In Proceedings of the IEEE Particle Accelerator Conference. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 1998. p. 165-167
Biino, C. ; Clement, M. ; Doble, N. ; Elsener, K. ; Gatignon, L. ; Grafstrom, P. ; Mikkelsen, U. ; Taratin, A. ; Moller, S. P. ; Uggerhoj, E. ; Keppler, P. ; Major, J. / First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal. Proceedings of the IEEE Particle Accelerator Conference. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 1998. pp. 165-167
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AU - Biino, C.

AU - Clement, M.

AU - Doble, N.

AU - Elsener, K.

AU - Gatignon, L.

AU - Grafstrom, P.

AU - Mikkelsen, U.

AU - Taratin, A.

AU - Moller, S. P.

AU - Uggerhoj, E.

AU - Keppler, P.

AU - Major, J.

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