Field emission properties of a-CNx films prepared by pulsed laser deposition

E. Fogarassy, T. Szörényi, F. Antoni, G. Pirio, J. Olivier, P. Legagneux, P. Boher

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at.%), which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.

Original languageEnglish
Pages (from-to)15-19
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume76
Issue number1
DOIs
Publication statusPublished - Jan 2003

Fingerprint

Graphite
Pulsed laser deposition
Field emission
pulsed laser deposition
field emission
Nitrogen
graphite
nitrogen
carbon nitrides
Carbon nitride
Amorphous carbon
Excimer lasers
Silicon
Laser ablation
excimer lasers
laser ablation
gas pressure
Surface morphology
Gases
augmentation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Field emission properties of a-CNx films prepared by pulsed laser deposition. / Fogarassy, E.; Szörényi, T.; Antoni, F.; Pirio, G.; Olivier, J.; Legagneux, P.; Boher, P.

In: Applied Physics A: Materials Science and Processing, Vol. 76, No. 1, 01.2003, p. 15-19.

Research output: Contribution to journalArticle

Fogarassy, E. ; Szörényi, T. ; Antoni, F. ; Pirio, G. ; Olivier, J. ; Legagneux, P. ; Boher, P. / Field emission properties of a-CNx films prepared by pulsed laser deposition. In: Applied Physics A: Materials Science and Processing. 2003 ; Vol. 76, No. 1. pp. 15-19.
@article{312201180f5a4bc087beb33e649fd1ff,
title = "Field emission properties of a-CNx films prepared by pulsed laser deposition",
abstract = "Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at.{\%}), which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.",
author = "E. Fogarassy and T. Sz{\"o}r{\'e}nyi and F. Antoni and G. Pirio and J. Olivier and P. Legagneux and P. Boher",
year = "2003",
month = "1",
doi = "10.1007/s003390201408",
language = "English",
volume = "76",
pages = "15--19",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Verlag",
number = "1",

}

TY - JOUR

T1 - Field emission properties of a-CNx films prepared by pulsed laser deposition

AU - Fogarassy, E.

AU - Szörényi, T.

AU - Antoni, F.

AU - Pirio, G.

AU - Olivier, J.

AU - Legagneux, P.

AU - Boher, P.

PY - 2003/1

Y1 - 2003/1

N2 - Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at.%), which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.

AB - Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at.%), which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.

UR - http://www.scopus.com/inward/record.url?scp=0037225098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037225098&partnerID=8YFLogxK

U2 - 10.1007/s003390201408

DO - 10.1007/s003390201408

M3 - Article

AN - SCOPUS:0037225098

VL - 76

SP - 15

EP - 19

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 1

ER -