Fatigue and temperature dependence of photoluminescence in some GexSe1-x glasses

M. Koós, I. Kósa Somogyi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Photoluminescence (PL) intensity versus temperature curves in the x = 0.16, 0.20, 0.25 glasses reveal localized states at ∼0.1 and 0.5 eV from the conduction band edge; these states are attributable to the Se component. The PL intensity increases and fatigue rate decreases with the atomic fraction of Ge in the composition range x <0.33. Fatigued samples resensitize to some extent if kept in darkness. These observations can be explained by, and support, a structural model of planar oligomers composed of Ge(Se 1 2)4 tetrahedra embedded in Se matrix.

Original languageEnglish
Pages (from-to)71-79
Number of pages9
JournalJournal of Non-Crystalline Solids
Volume64
Issue number1-2
DOIs
Publication statusPublished - 1984

Fingerprint

Photoluminescence
Fatigue of materials
photoluminescence
darkness
Glass
temperature dependence
glass
Conduction bands
oligomers
Oligomers
tetrahedrons
conduction bands
Temperature
curves
matrices
Chemical analysis
temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Fatigue and temperature dependence of photoluminescence in some GexSe1-x glasses. / Koós, M.; Kósa Somogyi, I.

In: Journal of Non-Crystalline Solids, Vol. 64, No. 1-2, 1984, p. 71-79.

Research output: Contribution to journalArticle

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