Fatigue and low temperature self-recovery of photoluminescence in a-Si:H

M. Koós, I. Pócsik, I. Kósa Somogyi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

During a short exposure at 80K it was observed that the photoluminescence (PL) intensity decreases by 14-50% of its original value to a steady-state by a t 1 3 time process. The fatigued PL intensity spontaneously returns to its starting value if the excitation light is turned off and the sample is kept in the dark for a few minutes at the original temperature. The dark recovery shows an exponential time dependence with time constants of about one minute. The fatigue of PL depends on the substrate temperature during preparation and has a maximum at Ts = 300 °C (50% fatigue). The results are interpreted by the transition: weak bonds {S-W arrow with hook} dangling bonds.

Original languageEnglish
Pages (from-to)1509-1512
Number of pages4
JournalSolid State Communications
Volume65
Issue number12
DOIs
Publication statusPublished - Mar 1988

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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