Fast growth of high quality GaN

D. Gogova, H. Larsson, R. Yakimova, Z. Zolnai, I. Ivanov, B. Monemar

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We have grown bulk-like GaN with a thickness up to 335 μm on 2″ sapphire substrates in a vertical HVPE reactor with a bottom-fed design. A very high growth rate of 250 μm/h is reached with high crystalline quality of the grown material. The low temperature PL spectra show the free A-exciton line at 3.483 eV and rather narrow I2 lines with FWHM of 1-2 meV indicating high crystalline quality and low doping concentration. This HVPE-GaN has the potential to provide lattice-matched and thermally-matched substrates for further epitaxial growth of high quality GaN with a low dislocation density for advanced heterostructure devices.

Original languageEnglish
Pages (from-to)13-17
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - Nov 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Gogova, D., Larsson, H., Yakimova, R., Zolnai, Z., Ivanov, I., & Monemar, B. (2003). Fast growth of high quality GaN. Physica Status Solidi (A) Applied Research, 200(1), 13-17. https://doi.org/10.1002/pssa.200303342