Fast generation-recombination channels due to epitaxial defects in SiC metal-oxide-semiconductor devices

A. O. Konstantinov, Q. Wahab, C. Hallin, C. I. Harris, B. Pécz

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The correlation is investigated between material properties of silicon carbide MOS devices and crystal imperfections. For devices formed on thick n-type epitaxial layers of 4H SiC a correspondence was established between formation of fast generation-recombination channels and triangular inclusions of 3C polytype. We analyze the structure of 3C inclusions and the mechanisms of carrier transport due to fast generation-recombination channels.

Original languageEnglish
Pages (from-to)1025-1028
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
Publication statusPublished - Dec 1 1998

Keywords

  • Epitaxial Defects
  • MOS
  • Oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Konstantinov, A. O., Wahab, Q., Hallin, C., Harris, C. I., & Pécz, B. (1998). Fast generation-recombination channels due to epitaxial defects in SiC metal-oxide-semiconductor devices. Materials Science Forum, 264-268(PART 2), 1025-1028.