Failure prediction of IGBT modules based on power cycling tests

Zoltan Sarkany, Andras Vass-Varnai, Gusztav Hantos, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This article describes a possible method to assess the long-time behaviour of IGBT modules using the combination of power cycles to stress the devices and thermal transient testing to monitor possible die-attach degradation. The failure of an IGBT module is a complex phenomenon; it consists of thermal, electrical and thermo-mechanical effects. After a theoretical overview of the possible mechanisms, a detailed description on the structure of selected IGBT module and the power cycling parameters is given. To better understand the temperature distribution on the device and the reason of the failure after the cycling, the module was opened up, inspected visually and an equivalent thermal model was built and calibrated to the physical test results. Failure mechanisms such as die attach resistance increase, wire bond cracking and gate oxide degradation were detected.

Original languageEnglish
Title of host publicationTHERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings
PublisherIEEE Computer Society
Pages270-273
Number of pages4
DOIs
Publication statusPublished - 2013
Event19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 - Berlin, Germany
Duration: Sep 25 2013Sep 27 2013

Other

Other19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
CountryGermany
CityBerlin
Period9/25/139/27/13

Fingerprint

Insulated gate bipolar transistors (IGBT)
Degradation
Temperature distribution
Wire
Oxides
Testing
Hot Temperature

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Sarkany, Z., Vass-Varnai, A., Hantos, G., & Rencz, M. (2013). Failure prediction of IGBT modules based on power cycling tests. In THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings (pp. 270-273). [6675197] IEEE Computer Society. https://doi.org/10.1109/THERMINIC.2013.6675197

Failure prediction of IGBT modules based on power cycling tests. / Sarkany, Zoltan; Vass-Varnai, Andras; Hantos, Gusztav; Rencz, M.

THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. IEEE Computer Society, 2013. p. 270-273 6675197.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sarkany, Z, Vass-Varnai, A, Hantos, G & Rencz, M 2013, Failure prediction of IGBT modules based on power cycling tests. in THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings., 6675197, IEEE Computer Society, pp. 270-273, 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013, Berlin, Germany, 9/25/13. https://doi.org/10.1109/THERMINIC.2013.6675197
Sarkany Z, Vass-Varnai A, Hantos G, Rencz M. Failure prediction of IGBT modules based on power cycling tests. In THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. IEEE Computer Society. 2013. p. 270-273. 6675197 https://doi.org/10.1109/THERMINIC.2013.6675197
Sarkany, Zoltan ; Vass-Varnai, Andras ; Hantos, Gusztav ; Rencz, M. / Failure prediction of IGBT modules based on power cycling tests. THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. IEEE Computer Society, 2013. pp. 270-273
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