Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Ákos Nemcsics, Lajos Tóth, László Dobos, Andrea Stemmann

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.

Original languageEnglish
Pages (from-to)927-930
Number of pages4
JournalMicroelectronics Reliability
Volume51
Issue number5
DOIs
Publication statusPublished - May 1 2011

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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