Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Ákos Nemcsics, L. Tóth, L. Dobos, Andrea Stemmann

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.

Original languageEnglish
Pages (from-to)927-930
Number of pages4
JournalMicroelectronics Reliability
Volume51
Issue number5
DOIs
Publication statusPublished - May 2011

Fingerprint

Semiconductor quantum dots
quantum dots
Reflection high energy electron diffraction
Transmission electron microscopy
transmission electron microscopy
Crystallization
aluminum gallium arsenides
flat surfaces
Crystal structure
gallium arsenide
crystallization
Crystalline materials
crystal structure
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality

Cite this

Facetting of the self-assembled droplet epitaxial GaAs quantum dot. / Nemcsics, Ákos; Tóth, L.; Dobos, L.; Stemmann, Andrea.

In: Microelectronics Reliability, Vol. 51, No. 5, 05.2011, p. 927-930.

Research output: Contribution to journalArticle

Nemcsics, Ákos ; Tóth, L. ; Dobos, L. ; Stemmann, Andrea. / Facetting of the self-assembled droplet epitaxial GaAs quantum dot. In: Microelectronics Reliability. 2011 ; Vol. 51, No. 5. pp. 927-930.
@article{18b42f7ca3394408b8e54da77a255d89,
title = "Facetting of the self-assembled droplet epitaxial GaAs quantum dot",
abstract = "In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.",
author = "{\'A}kos Nemcsics and L. T{\'o}th and L. Dobos and Andrea Stemmann",
year = "2011",
month = "5",
doi = "10.1016/j.microrel.2011.01.007",
language = "English",
volume = "51",
pages = "927--930",
journal = "Microelectronics and Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - Facetting of the self-assembled droplet epitaxial GaAs quantum dot

AU - Nemcsics, Ákos

AU - Tóth, L.

AU - Dobos, L.

AU - Stemmann, Andrea

PY - 2011/5

Y1 - 2011/5

N2 - In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.

AB - In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot.

UR - http://www.scopus.com/inward/record.url?scp=79953652792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953652792&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2011.01.007

DO - 10.1016/j.microrel.2011.01.007

M3 - Article

AN - SCOPUS:79953652792

VL - 51

SP - 927

EP - 930

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

IS - 5

ER -