Extended defects in III‐V semiconductor compounds

G. Ferenczi, L. Dózsa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to dislocations or dislocation generated lattice defects.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalCrystal Research and Technology
Volume16
Issue number2
DOIs
Publication statusPublished - 1981

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Dislocations (crystals)
Semiconductor materials
Defects
Deep level transient spectroscopy
Crystal defects
defects
Capacitance
capacitance

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Extended defects in III‐V semiconductor compounds. / Ferenczi, G.; Dózsa, L.

In: Crystal Research and Technology, Vol. 16, No. 2, 1981, p. 203-208.

Research output: Contribution to journalArticle

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