Experiments and numerical calculations for the interpretation of the backside wet etching of fused silica

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Abstract

Experimental investigations and thermal calculations of laser induced backside wet etching (LIBWE) of fused silica are presented. Fused silica plates having 1 mm thickness were irradiated by an ArF excimer laser in the presence of liquid absorber. The absorbing liquids were naphthalene-methyl-methacrylate solutions with different concentrations (0, 0.21, 0.43, 0.85 and 1.71 mol/dm3). The absorption coefficients (α) of these solutions at the applied wavelength were determined using a plano-concave microcuvette. It was found that the value of α could be varied in the range of 39400-62300 cm-1 by the change of the naphthalene content. The dependence of the etch rate on both the absorption coefficient of the liquid absorbers and the applied fluence was studied. The etch depths were measured by an atomic force microscope. At 450 mJ/cm2 laser fluence, the etch rates were found to be between 13.3 and 22.2 nm/pulse depending on the actual absorption coefficient. In the next experiment the laser fluence was varied from 110 to 860 mJ/cm2 and the etch rate was found to vary between 4.7 and 49.5 nm/pulse when the concentration of the applied solution was constant 0.85 mol/dm3. The mechanism of the LIBWE can be explained in the first approximation by thermal effects and their consequences. We calculated the maximal depth of melted fused silica layer by numerical solution of the one-dimension heat flow equation taking into account the phase transformations of the liquid reagents and the fused silica target. These calculations proved that the thickness of the melted quartz layer depends linearly on both of the absorption coefficient of the liquid and the laser fluence. Our calculations give an upper estimation of the etch rate. On the basis of our results a possible interpretation of the LIBWE was suggested.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalThin Solid Films
Volume453-454
DOIs
Publication statusPublished - Apr 1 2004

Fingerprint

Wet etching
Fused silica
etching
silicon dioxide
Lasers
absorptivity
fluence
Liquids
lasers
Experiments
Naphthalene
liquids
naphthalene
absorbers
liquid lasers
Quartz
Methacrylates
flow equations
Excimer lasers
pulses

Keywords

  • Absorption coefficient measurement
  • Excimer laser
  • Fused silica
  • Plano-concave microcuvette
  • Wet etching

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

@article{7f12b6dd7c4542da8fc079f489f8317d,
title = "Experiments and numerical calculations for the interpretation of the backside wet etching of fused silica",
abstract = "Experimental investigations and thermal calculations of laser induced backside wet etching (LIBWE) of fused silica are presented. Fused silica plates having 1 mm thickness were irradiated by an ArF excimer laser in the presence of liquid absorber. The absorbing liquids were naphthalene-methyl-methacrylate solutions with different concentrations (0, 0.21, 0.43, 0.85 and 1.71 mol/dm3). The absorption coefficients (α) of these solutions at the applied wavelength were determined using a plano-concave microcuvette. It was found that the value of α could be varied in the range of 39400-62300 cm-1 by the change of the naphthalene content. The dependence of the etch rate on both the absorption coefficient of the liquid absorbers and the applied fluence was studied. The etch depths were measured by an atomic force microscope. At 450 mJ/cm2 laser fluence, the etch rates were found to be between 13.3 and 22.2 nm/pulse depending on the actual absorption coefficient. In the next experiment the laser fluence was varied from 110 to 860 mJ/cm2 and the etch rate was found to vary between 4.7 and 49.5 nm/pulse when the concentration of the applied solution was constant 0.85 mol/dm3. The mechanism of the LIBWE can be explained in the first approximation by thermal effects and their consequences. We calculated the maximal depth of melted fused silica layer by numerical solution of the one-dimension heat flow equation taking into account the phase transformations of the liquid reagents and the fused silica target. These calculations proved that the thickness of the melted quartz layer depends linearly on both of the absorption coefficient of the liquid and the laser fluence. Our calculations give an upper estimation of the etch rate. On the basis of our results a possible interpretation of the LIBWE was suggested.",
keywords = "Absorption coefficient measurement, Excimer laser, Fused silica, Plano-concave microcuvette, Wet etching",
author = "Cs Vass and B. Hopp and T. Smausz and F. Ign{\'a}cz",
year = "2004",
month = "4",
day = "1",
doi = "10.1016/j.tsf.2003.11.081",
language = "English",
volume = "453-454",
pages = "121--126",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Experiments and numerical calculations for the interpretation of the backside wet etching of fused silica

AU - Vass, Cs

AU - Hopp, B.

AU - Smausz, T.

AU - Ignácz, F.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Experimental investigations and thermal calculations of laser induced backside wet etching (LIBWE) of fused silica are presented. Fused silica plates having 1 mm thickness were irradiated by an ArF excimer laser in the presence of liquid absorber. The absorbing liquids were naphthalene-methyl-methacrylate solutions with different concentrations (0, 0.21, 0.43, 0.85 and 1.71 mol/dm3). The absorption coefficients (α) of these solutions at the applied wavelength were determined using a plano-concave microcuvette. It was found that the value of α could be varied in the range of 39400-62300 cm-1 by the change of the naphthalene content. The dependence of the etch rate on both the absorption coefficient of the liquid absorbers and the applied fluence was studied. The etch depths were measured by an atomic force microscope. At 450 mJ/cm2 laser fluence, the etch rates were found to be between 13.3 and 22.2 nm/pulse depending on the actual absorption coefficient. In the next experiment the laser fluence was varied from 110 to 860 mJ/cm2 and the etch rate was found to vary between 4.7 and 49.5 nm/pulse when the concentration of the applied solution was constant 0.85 mol/dm3. The mechanism of the LIBWE can be explained in the first approximation by thermal effects and their consequences. We calculated the maximal depth of melted fused silica layer by numerical solution of the one-dimension heat flow equation taking into account the phase transformations of the liquid reagents and the fused silica target. These calculations proved that the thickness of the melted quartz layer depends linearly on both of the absorption coefficient of the liquid and the laser fluence. Our calculations give an upper estimation of the etch rate. On the basis of our results a possible interpretation of the LIBWE was suggested.

AB - Experimental investigations and thermal calculations of laser induced backside wet etching (LIBWE) of fused silica are presented. Fused silica plates having 1 mm thickness were irradiated by an ArF excimer laser in the presence of liquid absorber. The absorbing liquids were naphthalene-methyl-methacrylate solutions with different concentrations (0, 0.21, 0.43, 0.85 and 1.71 mol/dm3). The absorption coefficients (α) of these solutions at the applied wavelength were determined using a plano-concave microcuvette. It was found that the value of α could be varied in the range of 39400-62300 cm-1 by the change of the naphthalene content. The dependence of the etch rate on both the absorption coefficient of the liquid absorbers and the applied fluence was studied. The etch depths were measured by an atomic force microscope. At 450 mJ/cm2 laser fluence, the etch rates were found to be between 13.3 and 22.2 nm/pulse depending on the actual absorption coefficient. In the next experiment the laser fluence was varied from 110 to 860 mJ/cm2 and the etch rate was found to vary between 4.7 and 49.5 nm/pulse when the concentration of the applied solution was constant 0.85 mol/dm3. The mechanism of the LIBWE can be explained in the first approximation by thermal effects and their consequences. We calculated the maximal depth of melted fused silica layer by numerical solution of the one-dimension heat flow equation taking into account the phase transformations of the liquid reagents and the fused silica target. These calculations proved that the thickness of the melted quartz layer depends linearly on both of the absorption coefficient of the liquid and the laser fluence. Our calculations give an upper estimation of the etch rate. On the basis of our results a possible interpretation of the LIBWE was suggested.

KW - Absorption coefficient measurement

KW - Excimer laser

KW - Fused silica

KW - Plano-concave microcuvette

KW - Wet etching

UR - http://www.scopus.com/inward/record.url?scp=1542426361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542426361&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.081

DO - 10.1016/j.tsf.2003.11.081

M3 - Article

AN - SCOPUS:1542426361

VL - 453-454

SP - 121

EP - 126

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -