Experimental study of surface distortions in silicon carbide caused by diffusion welding

Janos Mizsei, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu, Toomas Rang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the last method has shown an increase in the density of surface states after the diffusion welding from 2×1015 cm-2 to 3.5×1016 cm-2.

Original languageEnglish
Title of host publicationBEC 2012 - Proceedings of the 13th Biennial Baltic Electronics Conference
Pages53-56
Number of pages4
DOIs
Publication statusPublished - Dec 1 2012
Event2012 13th Biennial Baltic Electronics Conference, BEC 2012 - Tallinn, Estonia
Duration: Oct 3 2012Oct 5 2012

Publication series

NameProceedings of the Biennial Baltic Electronics Conference, BEC
ISSN (Print)1736-3705

Other

Other2012 13th Biennial Baltic Electronics Conference, BEC 2012
CountryEstonia
CityTallinn
Period10/3/1210/5/12

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mizsei, J., Korolkov, O., Sleptsuk, N., Toompuu, J., & Rang, T. (2012). Experimental study of surface distortions in silicon carbide caused by diffusion welding. In BEC 2012 - Proceedings of the 13th Biennial Baltic Electronics Conference (pp. 53-56). [6376813] (Proceedings of the Biennial Baltic Electronics Conference, BEC). https://doi.org/10.1109/BEC.2012.6376813