Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al)

C. Eisenmenger-Sittner, B. Schwarz, C. Tomastik, P. Barna, A. Kovacs

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Under ultra high vacuum (UHV) conditions tin (Sn) forms a monoatomic wetting layer on aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes. This paper presents a systematic study of the wetting of the inner and outer interfaces of Al by Sn in sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wetting process is studied by scanning auger electron spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.

Original languageEnglish
Pages (from-to)5466-5469
Number of pages4
JournalApplied Surface Science
Volume252
Issue number15
DOIs
Publication statusPublished - May 30 2006

Fingerprint

Tin
Surface states
Aluminum
wetting
Wetting
tin
solid state
aluminum
Ultrahigh vacuum
ultrahigh vacuum
Surface diffusion
Auger electron spectroscopy
Deposition rates
Permeation
Atomic force microscopy
Grain boundaries
surface diffusion
Auger spectroscopy
Scanning
electron spectroscopy

Keywords

  • Activation
  • Spreading
  • Surface diffusion
  • Vapor deposition
  • Wetting

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al). / Eisenmenger-Sittner, C.; Schwarz, B.; Tomastik, C.; Barna, P.; Kovacs, A.

In: Applied Surface Science, Vol. 252, No. 15, 30.05.2006, p. 5466-5469.

Research output: Contribution to journalArticle

Eisenmenger-Sittner, C. ; Schwarz, B. ; Tomastik, C. ; Barna, P. ; Kovacs, A. / Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al). In: Applied Surface Science. 2006 ; Vol. 252, No. 15. pp. 5466-5469.
@article{1349d3bb748f44dfb0a96b63531d6d79,
title = "Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al)",
abstract = "Under ultra high vacuum (UHV) conditions tin (Sn) forms a monoatomic wetting layer on aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes. This paper presents a systematic study of the wetting of the inner and outer interfaces of Al by Sn in sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wetting process is studied by scanning auger electron spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.",
keywords = "Activation, Spreading, Surface diffusion, Vapor deposition, Wetting",
author = "C. Eisenmenger-Sittner and B. Schwarz and C. Tomastik and P. Barna and A. Kovacs",
year = "2006",
month = "5",
day = "30",
doi = "10.1016/j.apsusc.2005.12.087",
language = "English",
volume = "252",
pages = "5466--5469",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "15",

}

TY - JOUR

T1 - Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al)

AU - Eisenmenger-Sittner, C.

AU - Schwarz, B.

AU - Tomastik, C.

AU - Barna, P.

AU - Kovacs, A.

PY - 2006/5/30

Y1 - 2006/5/30

N2 - Under ultra high vacuum (UHV) conditions tin (Sn) forms a monoatomic wetting layer on aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes. This paper presents a systematic study of the wetting of the inner and outer interfaces of Al by Sn in sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wetting process is studied by scanning auger electron spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.

AB - Under ultra high vacuum (UHV) conditions tin (Sn) forms a monoatomic wetting layer on aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes. This paper presents a systematic study of the wetting of the inner and outer interfaces of Al by Sn in sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wetting process is studied by scanning auger electron spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.

KW - Activation

KW - Spreading

KW - Surface diffusion

KW - Vapor deposition

KW - Wetting

UR - http://www.scopus.com/inward/record.url?scp=33744798236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744798236&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.12.087

DO - 10.1016/j.apsusc.2005.12.087

M3 - Article

AN - SCOPUS:33744798236

VL - 252

SP - 5466

EP - 5469

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 15

ER -