Experimental determination of the inelastic mean free path of electrons in GaSb and InSb

G. Gergely, A. Sulyok, M. Menyhárd, J. Toth, D. Varga, A. Jablonski, M. Krawczyk, B. Gruzza, L. Bideux, C. Robert

Research output: Contribution to journalArticle

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Abstract

The inelastic mean free path (IMFP) of electrons is a fundamental material parameter for quantitative surface- and thin-film analysis by AES and XPS. Experimental determination of IMFP is based on the elastic peak electron spectroscopy (EPES) The intensity of the elastic peak recorded for the sample is compared with that of the Ni reference. The IMFP is evaluated from the Monte Carlo (MC) calculations of the elastic backscattering probability. The MC algorithm is based on elastic scattering cross-sections from the NIST 64 database and IMFP values of Ni. Experiments have been carried out in three laboratories working with different types of electron spectrometers and energy ranges: HSA, E = 0.2-5 keV; CMA, E = 0.2-2 keV, and RFA, E = 0.2-1.5 keV. GaSb(100) and InSb(100) samples have been cleaned and their surface layer amorphized by an Ar+ ion bombardment at Eion = 2 keV. The surface composition after cleaning was checked in situ by XPS. No metallic Ga, In or Sb phases were evidenced by plasmon losses on the surface after Eion = 2 keV Ar+ ion treatment. The MC calculations were based on the real surface composition. Thus, the IMFP values experimentally obtained for the ion bombarded samples can be considered as the volume parameters for E > 0.5 keV. A reasonable agreement was found with the calculated IMFP data of NIST and with other theoretically determined values of the IMFP.

Original languageEnglish
Pages (from-to)173-177
Number of pages5
JournalApplied Surface Science
Volume144-145
Issue number0
Publication statusPublished - Apr 1999

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mean free path
Surface structure
Electrons
X ray photoelectron spectroscopy
Ions
electrons
Elastic scattering
Electron spectroscopy
Backscattering
Ion bombardment
Spectrometers
Cleaning
Thin films
ions
scattering cross sections
cleaning
electron spectroscopy
Experiments
bombardment
backscattering

Keywords

  • Elastic scattering
  • Inelastic mean free path

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Experimental determination of the inelastic mean free path of electrons in GaSb and InSb. / Gergely, G.; Sulyok, A.; Menyhárd, M.; Toth, J.; Varga, D.; Jablonski, A.; Krawczyk, M.; Gruzza, B.; Bideux, L.; Robert, C.

In: Applied Surface Science, Vol. 144-145, No. 0, 04.1999, p. 173-177.

Research output: Contribution to journalArticle

Gergely, G, Sulyok, A, Menyhárd, M, Toth, J, Varga, D, Jablonski, A, Krawczyk, M, Gruzza, B, Bideux, L & Robert, C 1999, 'Experimental determination of the inelastic mean free path of electrons in GaSb and InSb', Applied Surface Science, vol. 144-145, no. 0, pp. 173-177.
Gergely, G. ; Sulyok, A. ; Menyhárd, M. ; Toth, J. ; Varga, D. ; Jablonski, A. ; Krawczyk, M. ; Gruzza, B. ; Bideux, L. ; Robert, C. / Experimental determination of the inelastic mean free path of electrons in GaSb and InSb. In: Applied Surface Science. 1999 ; Vol. 144-145, No. 0. pp. 173-177.
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