Exfoliation of single layer BiTeI flakes

Bálint Fülöp, Zoltán Tajkov, János Peto, Péter Kun, János Koltai, László Oroszlány, Endre Tóvári, Hiroshi Murakawa, Yoshinori Tokura, Sándor Bordács, Levente Tapasztó, S. Csonka

Research output: Contribution to journalArticle

12 Citations (Scopus)


Spin orbit interaction is strongly enhanced in structures where a heavy element is embedded in an inversion asymmetric crystal field. A simple way for realizing such a setup is to take a single atomic layer of a heavy element and encapsulate it between two atomic layers of different elemental composition. BiTeI is a promising candidate for such a 2D crystal. In its bulk form BiTeI consists of loosely coupled three atom thick layers where a layer of high atomic number Bi are sandwiched between Te and I sheets. Despite considerable recent attention to bulk BiTeI due to its giant Rashba spin splitting, the isolation of a single layer remained elusive. In this work we report the first successful isolation and characterization of a single layer of BiTeI using a novel exfoliation technique on stripped gold. Our scanning probe studies and first principles calculations show that the fabricated 100 μm sized BiTeI flakes are stable at ambient conditions. Giant Rashba splitting and spin-momentum locking of this new 2D crystal opens the way towards novel spintronic applications and synthetic topological heterostructures.

Original languageEnglish
Article number031013
Journal2D Materials
Issue number3
Publication statusPublished - Jun 13 2018


  • BiTeI
  • Rashba spin splitting
  • stripped gold exfoliation
  • topological insulator
  • van der Waals heterostructures

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Fülöp, B., Tajkov, Z., Peto, J., Kun, P., Koltai, J., Oroszlány, L., Tóvári, E., Murakawa, H., Tokura, Y., Bordács, S., Tapasztó, L., & Csonka, S. (2018). Exfoliation of single layer BiTeI flakes. 2D Materials, 5(3), [031013]. https://doi.org/10.1088/2053-1583/aac652