Excitation properties of the divacancy in 4H -SiC

Björn Magnusson, Nguyen Tien Son, András Csóré, Andreas Gällström, Takeshi Ohshima, A. Gali, Ivan G. Ivanov

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbor silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in 4H-SiC. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/-) level with respect to the conduction band for each divacancy configuration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally observed decay curves.

Original languageEnglish
Article number195202
JournalPhysical Review B
Volume98
Issue number19
DOIs
Publication statusPublished - Nov 5 2018

Fingerprint

Photoluminescence
photoluminescence
excitation
Quenching
quenching
traps
sheds
Defects
thresholds
defects
decay
Silicon
configurations
Conduction bands
Vacancies
Paramagnetic resonance
Charge transfer
electron paramagnetic resonance
conduction bands
Carbon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magnusson, B., Son, N. T., Csóré, A., Gällström, A., Ohshima, T., Gali, A., & Ivanov, I. G. (2018). Excitation properties of the divacancy in 4H -SiC. Physical Review B, 98(19), [195202]. https://doi.org/10.1103/PhysRevB.98.195202

Excitation properties of the divacancy in 4H -SiC. / Magnusson, Björn; Son, Nguyen Tien; Csóré, András; Gällström, Andreas; Ohshima, Takeshi; Gali, A.; Ivanov, Ivan G.

In: Physical Review B, Vol. 98, No. 19, 195202, 05.11.2018.

Research output: Contribution to journalArticle

Magnusson, B, Son, NT, Csóré, A, Gällström, A, Ohshima, T, Gali, A & Ivanov, IG 2018, 'Excitation properties of the divacancy in 4H -SiC', Physical Review B, vol. 98, no. 19, 195202. https://doi.org/10.1103/PhysRevB.98.195202
Magnusson B, Son NT, Csóré A, Gällström A, Ohshima T, Gali A et al. Excitation properties of the divacancy in 4H -SiC. Physical Review B. 2018 Nov 5;98(19). 195202. https://doi.org/10.1103/PhysRevB.98.195202
Magnusson, Björn ; Son, Nguyen Tien ; Csóré, András ; Gällström, Andreas ; Ohshima, Takeshi ; Gali, A. ; Ivanov, Ivan G. / Excitation properties of the divacancy in 4H -SiC. In: Physical Review B. 2018 ; Vol. 98, No. 19.
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