Excitation properties of silicon vacancy in silicon carbide

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Isolated point defects possessing a high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. The silicon vacancy in silicon carbide provides these features, making it a feasible candidate in this special and emerging field of science. However, the exact nature of the luminescence of silicon vacancies detected in hexagonal polytypes has not been clarified. This is the first crucial step needed to understand this basic defect in silicon carbide. We report density functional theory based calculations on the silicon vacancy defect. Based on the obtained results we identify the silicon vacancy related photoluminescence signals with the negatively charged defect.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages255-258
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Silicon
Silicon carbide
silicon carbides
Vacancies
silicon
Defects
excitation
defects
Quantum computers
quantum computers
Point defects
point defects
Ground state
Density functional theory
Luminescence
emerging
Photoluminescence
Energy gap
luminescence
Semiconductor materials

Keywords

  • Defect
  • Hybrid functional
  • Photoluminescence
  • Quantum bit
  • Quantum optics
  • Silicon vacancy
  • Time-dependent density functional theory

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Gali, A. (2012). Excitation properties of silicon vacancy in silicon carbide. In Materials Science Forum (Vol. 717-720, pp. 255-258). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.255

Excitation properties of silicon vacancy in silicon carbide. / Gali, A.

Materials Science Forum. Vol. 717-720 2012. p. 255-258 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gali, A 2012, Excitation properties of silicon vacancy in silicon carbide. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 255-258, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.255
Gali A. Excitation properties of silicon vacancy in silicon carbide. In Materials Science Forum. Vol. 717-720. 2012. p. 255-258. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.255
Gali, A. / Excitation properties of silicon vacancy in silicon carbide. Materials Science Forum. Vol. 717-720 2012. pp. 255-258 (Materials Science Forum).
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