Excimer laser reactive deposition of vanadium nitride thin films

E. D'Anna, A. Di Cristoforo, M. Fernández, G. Leggieri, A. Luches, G. Majni, P. Mengucci, L. Nanai

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

We report on the deposition of thin vanadium nitride films by ablating vanadium targets in low-pressure N 2 atmosphere, and on their characterization. The targets were vanadium foils (purity 99.8%). 3in. Si(1 1 1) wafers were used as substrates. Film characteristics (composition and crystalline structure) were studied as a function of N 2 pressure (0.5-200 Pa), KrF laser fluence (4.5-19 J/cm 2 ), substrate temperature (20-750°C) and target-to-substrate distance (30-70mm). Vanadium nitride is already formed at low N 2 ambient pressures (1 Pa) and laser fluences (6 J/cm 2 ) on substrates at room temperature. At the N 2 pressures of 1-10 Pa, the prevalent phase is VN. At higher pressures (100 Pa) and at relatively high laser fluences (16-19 J/cm 2 ), the dominant phase is V 2 N. The crystallinity of the films improves by increasing the substrate temperature. Well-crystallized films are obtained on substrates heated at 500 °C.

Original languageEnglish
Pages (from-to)496-501
Number of pages6
JournalApplied Surface Science
Volume186
Issue number1-4
DOIs
Publication statusPublished - Jan 28 2002
EventProceedings of the European Materials Research Society 2001 Symposium - Strasbourg, France
Duration: Jun 5 2001Jun 5 2001

Keywords

  • Laser ablation
  • Reactive laser ablation
  • Vanadium nitride

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    D'Anna, E., Di Cristoforo, A., Fernández, M., Leggieri, G., Luches, A., Majni, G., Mengucci, P., & Nanai, L. (2002). Excimer laser reactive deposition of vanadium nitride thin films. Applied Surface Science, 186(1-4), 496-501. https://doi.org/10.1016/S0169-4332(01)00757-7