The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo program for submicron MOS transistors is now extended with electron-phonon interaction models for intervalley scattering and with a carrierlattice energy exchange model. The impact ionisation and Auger recombination models are also improved. The carrier transport and lattice heat transport problems are self-consistently solved. As example the results of simulation, the spatial distribution of electrons, electron-phonon scattering events, impact ionisation events, Auger recombination events and the lattice temperature are presented. A new, low drain-to-source voltage breakdown effect has been observed.
|Number of pages||5|
|Journal||Physica Scripta T|
|Publication status||Published - Dec 1 1997|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Mathematical Physics
- Condensed Matter Physics