Examination of MOS structures by a 3D particle dynamics Monte-Carlo simulator including electrothermal effects

K. Tarnay, A. Gali, A. Poppe, T. Kocsis, F. Masszi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo program for submicron MOS transistors is now extended with electron-phonon interaction models for intervalley scattering and with a carrierlattice energy exchange model. The impact ionisation and Auger recombination models are also improved. The carrier transport and lattice heat transport problems are self-consistently solved. As example the results of simulation, the spatial distribution of electrons, electron-phonon scattering events, impact ionisation events, Auger recombination events and the lattice temperature are presented. A new, low drain-to-source voltage breakdown effect has been observed.

Original languageEnglish
Pages (from-to)290-294
Number of pages5
JournalPhysica Scripta T
Volume69
Publication statusPublished - Dec 1 1997

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

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