EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

K. Zhuravlev, T. Malin, S. Trubina, S. Erenburg, L. Dobos, B. Pécz, V. Davydov, A. Smirnov, R. Kyutt

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure above the Ga-K edge has been used to study the local structure of heterointerfaces in GaN/AlN multiple quantum wells (MQWs) grown by ammonia molecular beam epitaxy. The thickness of AlN and GaN layers in MQWs were evaluated using transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Two sets of MQWs structures with the number of period about of 20 and more than 100 were studied. The Ga-Ga interatomic distance in MQWs is lower than that in bulk GaN due to elastic compression of GaN layers in MQWs. This effect is less pronounced in thick structures because of almost full relaxation of GaN layers. The Ga-Al interatomic distance in thick MQWs is too long, about 0.1 Å, longer than typical values for AlGaN alloys. Then number of Ga cations in the second coordination shell of Ga atoms is lower than that predicted for abrupt heterointerfaces that evidences intermixing of heterointerfaces. The intermixing degree depends on the total thickness of MQWs

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number3
DOIs
Publication statusPublished - Mar 2013

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ammonia
quantum wells
x rays
molecular beam epitaxy
Raman spectroscopy
fine structure
cations
transmission electron microscopy
diffraction
spectroscopy
atoms

Keywords

  • EXAFS spectroscopy
  • GaN/AlN
  • Quantum wells

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE. / Zhuravlev, K.; Malin, T.; Trubina, S.; Erenburg, S.; Dobos, L.; Pécz, B.; Davydov, V.; Smirnov, A.; Kyutt, R.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, No. 3, 03.2013, p. 311-314.

Research output: Contribution to journalArticle

Zhuravlev, K. ; Malin, T. ; Trubina, S. ; Erenburg, S. ; Dobos, L. ; Pécz, B. ; Davydov, V. ; Smirnov, A. ; Kyutt, R. / EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2013 ; Vol. 10, No. 3. pp. 311-314.
@article{17add296acd749c88f5caa6a344f5d3b,
title = "EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE",
abstract = "Extended X-ray absorption fine structure above the Ga-K edge has been used to study the local structure of heterointerfaces in GaN/AlN multiple quantum wells (MQWs) grown by ammonia molecular beam epitaxy. The thickness of AlN and GaN layers in MQWs were evaluated using transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Two sets of MQWs structures with the number of period about of 20 and more than 100 were studied. The Ga-Ga interatomic distance in MQWs is lower than that in bulk GaN due to elastic compression of GaN layers in MQWs. This effect is less pronounced in thick structures because of almost full relaxation of GaN layers. The Ga-Al interatomic distance in thick MQWs is too long, about 0.1 {\AA}, longer than typical values for AlGaN alloys. Then number of Ga cations in the second coordination shell of Ga atoms is lower than that predicted for abrupt heterointerfaces that evidences intermixing of heterointerfaces. The intermixing degree depends on the total thickness of MQWs",
keywords = "EXAFS spectroscopy, GaN/AlN, Quantum wells",
author = "K. Zhuravlev and T. Malin and S. Trubina and S. Erenburg and L. Dobos and B. P{\'e}cz and V. Davydov and A. Smirnov and R. Kyutt",
year = "2013",
month = "3",
doi = "10.1002/pssc.201200706",
language = "English",
volume = "10",
pages = "311--314",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "3",

}

TY - JOUR

T1 - EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

AU - Zhuravlev, K.

AU - Malin, T.

AU - Trubina, S.

AU - Erenburg, S.

AU - Dobos, L.

AU - Pécz, B.

AU - Davydov, V.

AU - Smirnov, A.

AU - Kyutt, R.

PY - 2013/3

Y1 - 2013/3

N2 - Extended X-ray absorption fine structure above the Ga-K edge has been used to study the local structure of heterointerfaces in GaN/AlN multiple quantum wells (MQWs) grown by ammonia molecular beam epitaxy. The thickness of AlN and GaN layers in MQWs were evaluated using transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Two sets of MQWs structures with the number of period about of 20 and more than 100 were studied. The Ga-Ga interatomic distance in MQWs is lower than that in bulk GaN due to elastic compression of GaN layers in MQWs. This effect is less pronounced in thick structures because of almost full relaxation of GaN layers. The Ga-Al interatomic distance in thick MQWs is too long, about 0.1 Å, longer than typical values for AlGaN alloys. Then number of Ga cations in the second coordination shell of Ga atoms is lower than that predicted for abrupt heterointerfaces that evidences intermixing of heterointerfaces. The intermixing degree depends on the total thickness of MQWs

AB - Extended X-ray absorption fine structure above the Ga-K edge has been used to study the local structure of heterointerfaces in GaN/AlN multiple quantum wells (MQWs) grown by ammonia molecular beam epitaxy. The thickness of AlN and GaN layers in MQWs were evaluated using transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Two sets of MQWs structures with the number of period about of 20 and more than 100 were studied. The Ga-Ga interatomic distance in MQWs is lower than that in bulk GaN due to elastic compression of GaN layers in MQWs. This effect is less pronounced in thick structures because of almost full relaxation of GaN layers. The Ga-Al interatomic distance in thick MQWs is too long, about 0.1 Å, longer than typical values for AlGaN alloys. Then number of Ga cations in the second coordination shell of Ga atoms is lower than that predicted for abrupt heterointerfaces that evidences intermixing of heterointerfaces. The intermixing degree depends on the total thickness of MQWs

KW - EXAFS spectroscopy

KW - GaN/AlN

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=84874992935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874992935&partnerID=8YFLogxK

U2 - 10.1002/pssc.201200706

DO - 10.1002/pssc.201200706

M3 - Article

AN - SCOPUS:84874992935

VL - 10

SP - 311

EP - 314

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 3

ER -