Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

C. Frigeri, M. Serényi, A. Csík, Zs Szekrényes, K. Kamarás, L. Nasi, N. Q. Khánh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The evolution of the structure and of the hydrogen bonding configuration in hydrogenated a-Si/a-Ge multilayers prepared by RF sputtering is analyzed as a function of annealing. Single layers are also investigated to better evaluate the H behavior. IR absorption measurements show that H is released from its bonds to Si and Ge upon annealing. The mono-hydrides already disappear to a large extent for low annealing times (1 and 4 h), being replaced by di-hydrides, especially in the case of Si. For 10 h annealing both mono- and di-hydrides are almost completely destroyed. At the same time surface blisters form which, for the same annealing conditions, increase in size with increasing incorporated H in the as-deposited sample. It is concluded that the blisters in the multilayers are due to the trapping of the released H in cavities that increase in size upon annealing. The enlarged inner surface of the cavities is the candidate site for the formation of the di-hydrides at low annealing times, i.e., when the thermal energy supplied by the annealing is still insufficient to break all of them.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalApplied Surface Science
Volume269
DOIs
Publication statusPublished - 2013

Fingerprint

Hydrogen bonds
Multilayers
Annealing
Hydrides
Thermal energy
Sputtering

Keywords

  • Amorphous Si/Ge multilayer
  • Annealing
  • Blister
  • Hydrogen
  • IR absorption

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers. / Frigeri, C.; Serényi, M.; Csík, A.; Szekrényes, Zs; Kamarás, K.; Nasi, L.; Khánh, N. Q.

In: Applied Surface Science, Vol. 269, 2013, p. 12-16.

Research output: Contribution to journalArticle

@article{2de27b224caf4f4ba3405dcad8cb2fc6,
title = "Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers",
abstract = "The evolution of the structure and of the hydrogen bonding configuration in hydrogenated a-Si/a-Ge multilayers prepared by RF sputtering is analyzed as a function of annealing. Single layers are also investigated to better evaluate the H behavior. IR absorption measurements show that H is released from its bonds to Si and Ge upon annealing. The mono-hydrides already disappear to a large extent for low annealing times (1 and 4 h), being replaced by di-hydrides, especially in the case of Si. For 10 h annealing both mono- and di-hydrides are almost completely destroyed. At the same time surface blisters form which, for the same annealing conditions, increase in size with increasing incorporated H in the as-deposited sample. It is concluded that the blisters in the multilayers are due to the trapping of the released H in cavities that increase in size upon annealing. The enlarged inner surface of the cavities is the candidate site for the formation of the di-hydrides at low annealing times, i.e., when the thermal energy supplied by the annealing is still insufficient to break all of them.",
keywords = "Amorphous Si/Ge multilayer, Annealing, Blister, Hydrogen, IR absorption",
author = "C. Frigeri and M. Ser{\'e}nyi and A. Cs{\'i}k and Zs Szekr{\'e}nyes and K. Kamar{\'a}s and L. Nasi and Kh{\'a}nh, {N. Q.}",
year = "2013",
doi = "10.1016/j.apsusc.2012.10.039",
language = "English",
volume = "269",
pages = "12--16",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

AU - Frigeri, C.

AU - Serényi, M.

AU - Csík, A.

AU - Szekrényes, Zs

AU - Kamarás, K.

AU - Nasi, L.

AU - Khánh, N. Q.

PY - 2013

Y1 - 2013

N2 - The evolution of the structure and of the hydrogen bonding configuration in hydrogenated a-Si/a-Ge multilayers prepared by RF sputtering is analyzed as a function of annealing. Single layers are also investigated to better evaluate the H behavior. IR absorption measurements show that H is released from its bonds to Si and Ge upon annealing. The mono-hydrides already disappear to a large extent for low annealing times (1 and 4 h), being replaced by di-hydrides, especially in the case of Si. For 10 h annealing both mono- and di-hydrides are almost completely destroyed. At the same time surface blisters form which, for the same annealing conditions, increase in size with increasing incorporated H in the as-deposited sample. It is concluded that the blisters in the multilayers are due to the trapping of the released H in cavities that increase in size upon annealing. The enlarged inner surface of the cavities is the candidate site for the formation of the di-hydrides at low annealing times, i.e., when the thermal energy supplied by the annealing is still insufficient to break all of them.

AB - The evolution of the structure and of the hydrogen bonding configuration in hydrogenated a-Si/a-Ge multilayers prepared by RF sputtering is analyzed as a function of annealing. Single layers are also investigated to better evaluate the H behavior. IR absorption measurements show that H is released from its bonds to Si and Ge upon annealing. The mono-hydrides already disappear to a large extent for low annealing times (1 and 4 h), being replaced by di-hydrides, especially in the case of Si. For 10 h annealing both mono- and di-hydrides are almost completely destroyed. At the same time surface blisters form which, for the same annealing conditions, increase in size with increasing incorporated H in the as-deposited sample. It is concluded that the blisters in the multilayers are due to the trapping of the released H in cavities that increase in size upon annealing. The enlarged inner surface of the cavities is the candidate site for the formation of the di-hydrides at low annealing times, i.e., when the thermal energy supplied by the annealing is still insufficient to break all of them.

KW - Amorphous Si/Ge multilayer

KW - Annealing

KW - Blister

KW - Hydrogen

KW - IR absorption

UR - http://www.scopus.com/inward/record.url?scp=84875416470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875416470&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2012.10.039

DO - 10.1016/j.apsusc.2012.10.039

M3 - Article

VL - 269

SP - 12

EP - 16

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -