Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, F. Schmid, G. Pensl, G. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages493-496
Number of pages4
Volume483-485
Publication statusPublished - 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)02555476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

Fingerprint

Helium
Hydrogen
Photoluminescence
Annealing
Defects
Temperature

Keywords

  • D
  • D
  • Defects
  • Helium
  • Hydrogen
  • Implantation
  • Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., & Wagner, G. (2005). Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. In Materials Science Forum (Vol. 483-485, pp. 493-496). (Materials Science Forum; Vol. 483-485).

Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. / Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Schmid, F.; Pensl, G.; Wagner, G.

Materials Science Forum. Vol. 483-485 2005. p. 493-496 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, F, Devaty, RP, Choyke, WJ, Gali, A, Schmid, F, Pensl, G & Wagner, G 2005, Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. in Materials Science Forum. vol. 483-485, Materials Science Forum, vol. 483-485, pp. 493-496, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 8/31/04.
Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G et al. Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. In Materials Science Forum. Vol. 483-485. 2005. p. 493-496. (Materials Science Forum).
Yan, F. ; Devaty, R. P. ; Choyke, W. J. ; Gali, A. ; Schmid, F. ; Pensl, G. ; Wagner, G. / Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. Materials Science Forum. Vol. 483-485 2005. pp. 493-496 (Materials Science Forum).
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